Ruthenium disulfide thin films prepared by the successive ionic layer adsorption and reaction (SILAR) method

RuS2 thin films were prepared by the cost-effective chemical method-successive ionic layer adsorption and reaction (SILAR). The structural, optical, and electrical properties were investigated using X-ray diffraction, scanning electron microscopy, optical transmittance, and electrical resistivity methods. The results indicate that the films are homogeneous and dense; the structure of the as-deposited films is amorphous and they crystallize after annealed at 500degreesC for 30 min. The band gap of the as-deposited films is found to be 1.85 eV, and the electrical resistivity of them is in the order of 10(5) Omega(.)cm.