Simulation Analysis of Narrow Width Effect in Nano Structured Fully Depleted SOI MOSFET

被引：1

作者：

Mani, Prashant ^{[1
]}

Pandey, Manoj Kumar ^{[1
]}

机构：

[1] SRM Univ, Ghaziabad 201204, India

来源：

3RD INTERNATIONAL CONFERENCE ON RECENT TRENDS IN COMPUTING 2015 (ICRTC-2015) | 2015年 / 57卷

关键词：

Nano structured; Fully Depleted; Silicon on Insulator; Thresholdvoltage;

D O I：

10.1016/j.procs.2015.07.428

中图分类号：

TP301 [理论、方法];

学科分类号：

081202 ;

摘要：

This paper is about the analysis of width effect in a narrow channel fully depleted SOT MOSFET. The effect of width variation is observed on threshold voltage of Nano structured Fully Depleted SOT MOSFET. In present analysis variation in narrow channel width and short channel length of the device reduced the threshold voltage The channel conduction is also influence by changing the Tsi and Tox of the proposed device.The Lateral direction engineering is performed during the analysis of NSMOSFET(Nano Structured). (C) 2015 The Authors. Published by Elsevier B.V.

引用

页码：637 / 641

页数：5

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