Normal incident quantum well infrared photodetectors

被引：0
|
作者：
Lee, CP [1 ]
Wang, SY [1 ]
机构：
[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu, Taiwan
来源：
1998 5TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY PROCEEDINGS | 1998年
关键词：
D O I：
10.1109/ICSICT.1998.785970
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
By using highly doped InGaAs quantum wells, grating-free two color quantum well infrared photodetectors with large normal incidence responses have been demonstrated. These devices have comparable performance as conventional QWIPs with surface gratings but without the complexity of gratings. The TE absorption was found to be enhanced by the use of the highly strained: InGaAs quantum wells and the high doping concentration in the wells. Two-color QWIPs Rave also demonstrated with excellent performance.
引用
收藏
页码：637 / 640
页数：4
相关论文
共 50 条
  • [1] Corrugated quantum well infrared photodetectors for normal incident light coupling
    Chen, CJ
    Choi, KK
    Tidrow, MZ
    Tsui, DC
    [J]. APPLIED PHYSICS LETTERS, 1996, 68 (11) : 1446 - 1448
  • [2] The influence of interface roughness on the normal incident absorption of quantum-well infrared photodetectors
    Chou, S. T.
    Lin, S. Y.
    Yu, Bonnie
    Shyue, J. J.
    Tseng, C. C.
    Chen, C. N.
    Wu, M. C.
    Lin, W.
    [J]. THIN SOLID FILMS, 2009, 517 (05) : 1799 - 1802
  • [3] Normal incident two color voltage tunable InGaAs quantum well infrared photodetectors
    Wang, SY
    Lee, CP
    [J]. INTERSUBBAND TRANSITIONS IN QUANTUM WELLS: PHYSICS AND DEVICES, 1998, : 110 - 115
  • [4] ANALYSIS OF NORMAL-INCIDENT ABSORPTION IN P-TYPE QUANTUM-WELL INFRARED PHOTODETECTORS
    MAN, P
    PAN, DS
    [J]. APPLIED PHYSICS LETTERS, 1992, 61 (23) : 2799 - 2801
  • [5] Doping effect on normal incident InGaAs/GaAs long-wavelength quantum well infrared photodetectors
    Wang, SY
    Lee, CP
    [J]. JOURNAL OF APPLIED PHYSICS, 1997, 82 (05) : 2680 - 2683
  • [6] Normal incident long-wavelength quantum well infrared photodetectors using electron intersubband transitions
    Wang, SY
    Lee, CP
    [J]. APPLIED PHYSICS LETTERS, 1997, 71 (01) : 119 - 121
  • [7] Quantum well infrared photodetectors
    Manasreh, MO
    Missous, M
    Stead, A
    Jelen, C
    Razeghi, M
    [J]. LONG WAVELENGTH INFRARED DETECTORS AND ARRAYS: PHYSICS AND APPLICATIONS V, 1997, 33 : 69 - 80
  • [8] Quantum Well Infrared Photodetectors
    Gunapala, S. D.
    Bandara, S. V.
    Rafol, S. B.
    Ting, D. Z.
    [J]. ADVANCES IN INFRARED PHOTODETECTORS, 2011, 84 : 59 - +
  • [9] Effect of indium content on the normal-incident photoresponse of InGaAs/GaAs quantum-well infrared photodetectors
    Hernando, J
    Sánchez-Rojas, JL
    Guzmán, A
    Muñoz, E
    Tijero, JMG
    González, D
    Aragón, G
    García, R
    [J]. APPLIED PHYSICS LETTERS, 2001, 78 (16) : 2390 - 2392
  • [10] Nonuniform quantum well infrared photodetectors
    [J]. 1600, American Institute of Physics Inc. (87):
12345