ANALYSIS OF NORMAL-INCIDENT ABSORPTION IN P-TYPE QUANTUM-WELL INFRARED PHOTODETECTORS

被引:38
|
作者
MAN, P
PAN, DS
机构
[1] Department of Electrical Engineering, University of California at Los Angeles, Los Angeles
关键词
D O I
10.1063/1.108482
中图分类号
O59 [应用物理学];
学科分类号
摘要
Normal-incident absorption in the recently-demonstrated, p-type quantum-well infrared photodetectors is analyzed with the k.p theory, under the envelope-function approximation. A first-principles calculation of the infrared-absorption spectra is performed with no adjustable parameter. The responsivity is evaluated from the calculated normal-incident absorption and the experimentally-derived photoconductive gain. Good agreement is obtained with measurements at lambda < lambda(c). The bandwidths of the infrared-absorption spectra are found to be limited by spin-orbit splitting as well as the overlap integrals.
引用
收藏
页码:2799 / 2801
页数:3
相关论文
共 50 条
  • [1] ANALYSIS OF NORMAL-INCIDENT ABSORPTION IN A PROPOSED P-TYPE VERY-NARROW-QUANTUM-WELL INFRARED PHOTODETECTOR
    MAN, P
    PAN, DS
    [J]. APPLIED PHYSICS LETTERS, 1994, 64 (03) : 321 - 323
  • [2] Effect of indium content on the normal-incident photoresponse of InGaAs/GaAs quantum-well infrared photodetectors
    Hernando, J
    Sánchez-Rojas, JL
    Guzmán, A
    Muñoz, E
    Tijero, JMG
    González, D
    Aragón, G
    García, R
    [J]. APPLIED PHYSICS LETTERS, 2001, 78 (16) : 2390 - 2392
  • [3] Investigation of broadband p-type quantum-well infrared photodetectors
    Chu, J
    Li, SS
    Singh, A
    [J]. APPLIED PHYSICS LETTERS, 1998, 73 (23) : 3414 - 3416
  • [4] The influence of interface roughness on the normal incident absorption of quantum-well infrared photodetectors
    Chou, S. T.
    Lin, S. Y.
    Yu, Bonnie
    Shyue, J. J.
    Tseng, C. C.
    Chen, C. N.
    Wu, M. C.
    Lin, W.
    [J]. THIN SOLID FILMS, 2009, 517 (05) : 1799 - 1802
  • [5] Enhanced normal-incident absorption of quantum-dot infrared photodetectors with smaller quantum dots
    Tseng, Chi-Che
    Chou, Shu-Ting
    Chen, Yi-Hao
    Chen, Cheng-Nan
    Lin, Wei-Hsun
    Chung, Tung-Hsun
    Lin, Shih-Yen
    Chiu, Pei-Chin
    Chyi, Jen-Inn
    Wu, Meng-Chyi
    [J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 2008, 20 (13-16) : 1240 - 1242
  • [6] The effect of compressive strain on the performance of p-type quantum-well infrared photodetectors
    Chu, J
    Li, SS
    [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1997, 33 (07) : 1104 - 1113
  • [7] Compressively strained p-type InGaAs/AlGaAs quantum-well infrared photodetectors
    Zhang, DH
    Shi, W
    Li, N
    Chu, JH
    [J]. JOURNAL OF APPLIED PHYSICS, 2002, 92 (10) : 6287 - 6290
  • [8] Normal incident quantum well infrared photodetectors
    Lee, CP
    Wang, SY
    [J]. 1998 5TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY PROCEEDINGS, 1998, : 637 - 640
  • [9] Integration of n-type and p-type quantum-well infrared photodetectors for sequential multicolor operation
    Dupont, E
    Gao, M
    Wasilewski, Z
    Liu, HC
    [J]. APPLIED PHYSICS LETTERS, 2001, 78 (14) : 2067 - 2069
  • [10] Resonant-cavity-enhanced p-type GaAs/AlGaAs quantum-well infrared photodetectors
    Shen, A
    Liu, HC
    Gao, M
    Dupont, E
    Buchanan, M
    Ehret, J
    Brown, GJ
    Szmulowicz, F
    [J]. APPLIED PHYSICS LETTERS, 2000, 77 (15) : 2400 - 2402