A Metal Oxide Heterostructure for Resistive Random Access Memory Devices

被引：2
|
作者：
Liao Zhao-Liang [1 ]
Chen Dong-Min [2 ]
机构：
[1] Louisianan State Univ, Dept Phys & Astron, Baton Rouge, LA 70810 USA
[2] Peking Univ, Acad Adv Interdisciplinary Studies, Beijing 100871, Peoples R China
来源：
CHINESE PHYSICS LETTERS | 2013年 / 30卷 / 04期
基金：
中国国家自然科学基金;
关键词：
SWITCHING MEMORIES; SUPERCONDUCTIVITY; NONVOLATILE; TRANSPORT;
D O I：
10.1088/0256-307X/30/4/047701
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We propose and investigate a metal oxide heterostructure (MOH) based resistive switching (RS) device. The driving mechanism of resistive switching (RS) in an MOH is more directly related to oxygen ion/vacancy migration around their interface. The performance of an MOH-based RS device depends on the oxygen mobility, oxygen vacancy concentration as well as its relation to the resistivity. An enhanced ratio of high resistance state to low resistance state can be achieved if the two involved metal oxides are mutually complemental metal oxides in which one of them has larger resistivity with increasing concentration of vacancy while the other one is the reverse.
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页数：4
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