Synthesis, Characterization and Hall Effect Measurements of Nano-Crystalline ZnO Thin Films

被引：8
|
作者：
Maqsood, Asghari [1 ]
Islam, M. [1 ]
Ikram, M. [1 ]
Salam, S. [1 ]
Ameer, S. [1 ]
机构：
[1] Natl Univ Sci & Technol, Sch Chem & Mat Engn, Thermal Transport Lab, Islamabad, Pakistan
来源：
ADVANCED MATERIALS XII | 2012年 / 510-511卷
关键词：
Semi conductors; Magneto resistance; IV characterization; photovoltaic materials; SOL-GEL PROCESS; FE-DOPED ZNO; TRANSPARENT;
D O I：
10.4028/www.scientific.net/KEM.510-511.186
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
ZnO thin films were prepared by sol-gel method. Prepared thin films were then characterized by SEM, XRD, EDX and Hall effect measurements. SEM confirmed the morphological studies of ZnO thin films. Crystallite size is calculated using the Scherrer formula. Crystallite and grain sizes are obtained through XRD and SEM. EDS analysis confirms mass percentage of ZnO deposited. Decreasing trend of magneto resistance with temperature is observed. The optical transmission spectra of the sol gel deposited ZnO thin films showed high transmittance (>70%) in the visible region and indicates that the transmittance of ZnO films gradually decreased as the thickness increased. Decreasing trend of resistivity and sheet resistance with thickness are also observed. The IV characterization of ZnO thin films under influence of UV and dark conditions are reported. The dc electrical resistivity data follow the hoping model.
引用
收藏
页码：186 / 193
页数：8
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