Boron-doped Homoepitaxial Diamond CVD from Microwave Plasma-Activated Ethanol/Trimethyl Borate/Hydrogen Mixtures

被引：7
|
作者：
Belousov, Maxim E. [1 ]
Mankelevich, Yuri A. [1 ]
Minakov, Pavel V. [1 ]
Rakhimov, Alexander T. [1 ]
Suetin, Nikolay V. [1 ]
Khmelnitskiy, Roman A. [2 ]
Tal, Alexei A. [2 ]
Khomich, Alexander V. [3 ]
机构：
[1] Moscow MV Lomonosov State Univ, Skobeltsyn Inst Nucl Phys, Moscow 119991, Russia
[2] PN Lebedev Phys Inst, Moscow 119991, Russia
[3] Kotelnikov Inst Radio Engn & Elect, Fryazino 141120, Moscow Region, Russia
来源：
CHEMICAL VAPOR DEPOSITION | 2012年 / 18卷 / 10-12期
关键词：
Boron doping; Diamond homoepitaxy; Low roughness surface; PACVD; Plasma modeling; CHEMICAL-VAPOR-DEPOSITION; SINGLE-CRYSTAL DIAMOND; GAS-PHASE CHEMISTRY; MODELING INVESTIGATIONS; ACCEPTOR; CATHODOLUMINESCENCE;
D O I：
10.1002/cvde.201206993
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
Boron-doped homoepitaxial diamond films are deposited from ethanol/trimethyl borate/hydrogen mixtures activated by microwave (MW) discharge plasma. The high smoothness, uniform distribution of boron atoms located predominantly in substitution positions, and low concentration of the nitrogen-compensating impurity is achieved. C2H5OH dissociation pathways in MW plasma-activated (PA)CVD reactor conditions, and the distribution of CxHyOz concentrations in the hot core of C2H5OH/H2 plasma are calculated. It is shown that the methyl radical is as responsible for diamond growth in C2H5OH/H2 mixtures as for a conventional CH4/H2 mixture.
引用
收藏
页码：302 / 308
页数：7
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