Boron-doped Homoepitaxial Diamond CVD from Microwave Plasma-Activated Ethanol/Trimethyl Borate/Hydrogen Mixtures

被引：7

作者：

Belousov, Maxim E. ^{[1
]}

Mankelevich, Yuri A. ^{[1
]}

Minakov, Pavel V. ^{[1
]}

Rakhimov, Alexander T. ^{[1
]}

Suetin, Nikolay V. ^{[1
]}

Khmelnitskiy, Roman A. ^{[2
]}

Tal, Alexei A. ^{[2
]}

Khomich, Alexander V. ^{[3
]}

机构：

[1] Moscow MV Lomonosov State Univ, Skobeltsyn Inst Nucl Phys, Moscow 119991, Russia

[2] PN Lebedev Phys Inst, Moscow 119991, Russia

[3] Kotelnikov Inst Radio Engn & Elect, Fryazino 141120, Moscow Region, Russia

来源：

CHEMICAL VAPOR DEPOSITION | 2012年 / 18卷 / 10-12期

关键词：

Boron doping; Diamond homoepitaxy; Low roughness surface; PACVD; Plasma modeling; CHEMICAL-VAPOR-DEPOSITION; SINGLE-CRYSTAL DIAMOND; GAS-PHASE CHEMISTRY; MODELING INVESTIGATIONS; ACCEPTOR; CATHODOLUMINESCENCE;

D O I：

10.1002/cvde.201206993

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Boron-doped homoepitaxial diamond films are deposited from ethanol/trimethyl borate/hydrogen mixtures activated by microwave (MW) discharge plasma. The high smoothness, uniform distribution of boron atoms located predominantly in substitution positions, and low concentration of the nitrogen-compensating impurity is achieved. C2H5OH dissociation pathways in MW plasma-activated (PA)CVD reactor conditions, and the distribution of CxHyOz concentrations in the hot core of C2H5OH/H2 plasma are calculated. It is shown that the methyl radical is as responsible for diamond growth in C2H5OH/H2 mixtures as for a conventional CH4/H2 mixture.

引用

页码：302 / 308

页数：7

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