Origin of the unusual reflectance and density contrasts in the phase-change material Cu2GeTe3

被引：35

作者：

Skelton, J. M. ^{[1
]}

Kobayashi, K. ^{[2
,3
,4
]}

Sutou, Y. ^{[5
]}

Elliott, S. R. ^{[1
]}

机构：

[1] Univ Cambridge, Dept Chem, Cambridge CB2 1EW, England

[2] Japan Atom Energy Agcy, Quantum Beam Sci Directorate, Sayo, Hyogo 6795148, Japan

[3] Hiroshima Univ, Hiroshima Synchrotron Radiat Ctr, Higashi Hiroshima City, Hiroshima 7390046, Japan

[4] Kouchi Univ Technol, Kami City, Kochi 7828502, Japan

[5] Tohoku Univ, Grad Sch Engn, Dept Mat Sci, Sendai, Miyagi 9808579, Japan

来源：

APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 22期

基金：

英国工程与自然科学研究理事会;

关键词：

TOTAL-ENERGY CALCULATIONS; AMORPHOUS THIN-FILMS; CRYSTAL-STRUCTURE; TRANSITIONS; REFINEMENT; GE1CU2TE3; MEMORY;

D O I：

10.1063/1.4809598

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The recent demonstration of Cu2GeTe3 (CGT) as a potential phase-change material (PCM) for next-generation non-volatile memories represents a significant discovery. In contrast to widely studied PCMs, amorphous CGT is denser and more reflective than crystalline CGT, and the phase transition takes place to a tetrahedrally bonded crystal, a very different geometry to the octahedrally bonded cubic structures adopted by other PCMs. We have performed a computer-simulational study of CGT, investigating the atomic-level structure and physical properties of both phases. Our results lead to hypotheses to account for the higher amorphous-phase density and reflectivity, which may provide new design criteria for identifying novel PCMs. (C) 2013 AIP Publishing LLC.

引用

页数：4

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