Effect of bromine adsorption on the charge transport in porous silicon-silicon structures

被引：11

作者：

Olenych, Igor B. ^{[1
]}

Monastyrskii, Liubomyr S. ^{[1
]}

Aksimentyeva, Olena I. ^{[1
]}

Sokolovskii, Bogdan S. ^{[1
]}

机构：

[1] Ivan Franko Natl Univ Lviv, UA-79005 Lvov, Ukraine

来源：

ELECTRONIC MATERIALS LETTERS | 2013年 / 9卷 / 03期

关键词：

porous silicon; bromine adsorption; conductivity; photovoltage; spectral characteristics; GAS; MOLECULES; SENSORS;

D O I：

10.1007/s13391-012-2126-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We studied the electrophysical characteristics of porous silicon (PS) layers formed on single-crystalline silicon substrates with both n-type and p-types of conductivity under conditions of adsorption of bromine molecules. An increase in the conductivity of PS-p-Si nanostructures is observed with increasing bromine concentration. The adsorption of bromine is shown to give rise to 'diode-like' current-voltage characteristics of the PS formed on the silicon substrate with the electronic conductivity. This can be caused by inversion of the conductivity type occurring in nanocrystals of the porous layer. Spectral characteristics of photovoltage for our structures subjected to bromine adsorption have been studied in the range of 450 - 1100 nm. We suggest a possible mechanism for the influence of bromine adsorption on the electrical and photoelectrical properties of the PS-silicon structures.

引用

页码：257 / 260

页数：4

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