The effect of additives on the adsorption properties of porous silicon

被引：48
|
作者：
OHalloran, GM [1 ]
Kuhl, M [1 ]
Trimp, PJ [1 ]
French, PJ [1 ]
机构：
[1] TU CHEMNITZ ZWICKAU,DEPT ELECT ENGN,D-09126 CHEMNITZ,GERMANY
来源：
SENSORS AND ACTUATORS A-PHYSICAL | 1997年 / 61卷 / 1-3期
关键词：
porous silicon; additives; surfactants; adsorption; humidity sensing;
D O I：
10.1016/S0924-4247(97)80298-1
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Porous silicon is used as a dielectric layer in a capacitive humidity sensor. The addition of a commercial surfactant to the electrolyte during porous silicon formation has been found to affect significantly the adsorption properties of the layer, resulting in a much increased sensitivity and response speed. The structure of the formed porous layer is examined and compared with those formed using HF alone and a standard surfactant.
引用
收藏
页码：415 / 420
页数：6
相关论文
共 50 条
  • [1] Effect of sintering additives on microstructure and mechanical properties of porous silicon nitride ceramics
    Yang, Jun
    Yang, Jian-Feng
    Shan, Shao-Yun
    Gao, Ji-Qiang
    Ohji, Tatsuki
    JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 2006, 89 (12) : 3843 - 3845
  • [2] The effect of adsorption on the electrical properties of structures based on oxidized porous silicon
    Bilenko, DI
    Belobrovaya, OY
    Zharkova, ÉA
    Mysenko, IB
    Khasina, EI
    SEMICONDUCTORS, 2002, 36 (04) : 466 - 471
  • [3] The effect of adsorption on the electrical properties of structures based on oxidized porous silicon
    D. I. Bilenko
    O. Ya. Belobrovaya
    É. A. Zharkova
    I. B. Mysenko
    E. I. Khasina
    Semiconductors, 2002, 36 : 466 - 471
  • [4] Effect of sintering additives on properties of silicon carbide porous ceramics prepared at low temperature
    Zhou J.
    Jiang Q.
    Yang Y.
    Feng S.
    Zhong Z.
    Xing W.
    Huagong Xuebao/CIESC Journal, 2021, 72 (04): : 2293 - 2299
  • [5] Effect of adsorption of the donor and acceptor molecules at the surface of porous silicon on the recombination properties of silicon nanocrystals
    Konstantinova, EA
    Ryabchikov, YV
    Osminkina, LA
    Vorontsov, AS
    Kashkarov, PK
    SEMICONDUCTORS, 2004, 38 (11) : 1344 - 1349
  • [6] Effect of adsorption of the donor and acceptor molecules at the surface of porous silicon on the recombination properties of silicon nanocrystals
    E. A. Konstantinova
    Yu. V. Ryabchikov
    L. A. Osminkina
    A. S. Vorontsov
    P. K. Kashkarov
    Semiconductors, 2004, 38 : 1344 - 1349
  • [7] The effect of NO2 adsorption on optical and electrical properties of porous silicon layers
    Bolotov, V. V.
    Ponomareva, I. V.
    Sten'kin, Yu. A.
    Kan, V. E.
    SEMICONDUCTORS, 2007, 41 (08) : 962 - 964
  • [8] The effect of NO2 adsorption on optical and electrical properties of porous silicon layers
    V. V. Bolotov
    I. V. Ponomareva
    Yu. A. Sten’kin
    V. E. Kan
    Semiconductors, 2007, 41 : 962 - 964
  • [9] Adsorption of Additives and their Effect on Properties of Ni Deposits
    Yang Fangzu
    Xu Jiayuan
    Xie Zhaoxiong
    Xu Shukai
    Zhou Shaomin
    ACTA PHYSICO-CHIMICA SINICA, 1995, 11 (03) : 223 - 227
  • [10] Modification of the properties of porous silicon on adsorption of iodine molecules
    A. S. Vorontsov
    L. A. Osminkina
    A. E. Tkachenko
    E. A. Konstantinova
    V. G. Elenskiĭ
    V. Yu. Timoshenko
    P. K. Kashkarov
    Semiconductors, 2007, 41 : 953 - 957
12345