Systematic Study of Traps in AlN/GaN/AlGaN HEMTs on SiC Substrate by Numerical TCAD Simulation

被引：0
|
作者：
Subramani, N. K. [1 ]
Sahoo, A. K. [1 ]
Nallatamby, J-C. [1 ]
Sommet, R. [1 ]
Quere, R. [1 ]
机构：
[1] Univ Limoges, CNRS, XLIM UMR7252, F-19100 Brive, France
来源：
2016 12TH CONFERENCE ON PH.D. RESEARCH IN MICROELECTRONICS AND ELECTRONICS (PRIME) | 2016年
关键词：
AlGaN HEMT; Silicon Carbide; AC simulation; trapping effects; Y parameters; ELECTRON-MOBILITY TRANSISTORS; GAN HEMTS;
D O I：
暂无
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
In this work, we investigate the impact of GaN channel traps on the performance of AlN/GaN/AlGaN HEMT device grown on SiC substrate using two-dimensional TCAD physics based simulations. Traps specifications used here are acquired from the data reported in the literature. The simulated DC characteristics are compared with experimental measurements for validation, providing an appropriate feedback for future technological improvements. Furthermore using the Low Frequency (LF) AC simulations results, we demonstrate that the LF admittance dispersion measurement is an effective tool for identifying the traps in the device structure.
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页数：4
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