Quantum tunneling behavior of nanocrystalline silicon/crystalline silicon heterostructure diode

被引：0
|
作者：
Lu, J. J. [1 ]
Jiang, Z. Z. [1 ]
Chen, J. [1 ]
Pan, W. [1 ]
Shen, W. Z. [1 ]
机构：
[1] Shanghai Jiao Tong Univ, Dept Phys, Lab Condensed Matter Spect & Optoelect Phys, Shanghai 200030, Peoples R China
来源：
2008 2ND IEEE INTERNATIONAL NANOELECTRONICS CONFERENCE, VOLS 1-3 | 2008年
关键词：
D O I：
10.1109/INEC.2008.4585603
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report the observation of various quantum behaviors of nanocrystalline silicon/crystalline silicon heterostructure diodes. Tunneling has been proved to be the dominant transport mechanism for the device-grade diode operating below 80 K. For the sample which is composed by highly ordered nanocrystalline silicon, interesting physical phenomena have been revealed, which include high electron mobility, resonant tunneling and periodical negative differential conductivity under different reverse bias regions. A number of temperature dependent current-voltage measurements have been done to support our observations. Theoretical self-consistent calculations further explain the quantum tunneling mechanisms behind the experimental results.
引用
收藏
页码：794 / 797
页数：4
相关论文
共 50 条
  • [41] Anisotropic lithiation behavior of crystalline silicon
    Wagesreither, Stefan
    Lugstein, Alois
    Bertagnolli, Emmerich
    NANOTECHNOLOGY, 2012, 23 (49)
  • [42] Correlation Between Lifetime Curve and Performance of Amorphous Silicon/Crystalline Silicon Heterostructure Solar Cell
    Ghosh, Kunal
    Herasimenka, Stanislau
    Dauksher, Bill
    Bowden, Stuart
    2013 IEEE 39TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC), 2013, : 1232 - 1237
  • [43] Role of hot carriers in the interfacial transport in amorphous silicon/crystalline silicon heterostructure solar cells
    Ghosh, Kunal
    Bowden, Stuart
    Tracy, Clarence
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2013, 210 (02): : 413 - 419
  • [44] Nanocrystalline silicon in amorphous silicon carbide matrix for Si quantum dots superlattice
    Kurokawa, Yasuyoshi
    Miyajima, Shinsuke
    Yamada, Akira
    Konagai, Makoto
    CONFERENCE RECORD OF THE 2006 IEEE 4TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION, VOLS 1 AND 2, 2006, : 138 - 141
  • [45] A Monte Carlo simulation of ballistic transport in nanocrystalline silicon diode
    Kojima, A
    Koshida, N
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 2003, 197 (02): : 452 - 457
  • [46] Electrical properties of a silicon quantum dot diode
    1600, American Inst of Physics, Woodbury, NY, USA (74):
  • [47] Electrical properties of a silicon quantum dot diode
    Nicollian, Edward H.
    Tsu, Raphael
    Journal of Applied Physics, 1993, 74 (06):
  • [48] Quantum logical elements for quantum computer based on nanocrystalline silicon
    Milovzorov, DE
    QUANTUM DOTS, NANOPARTICLES, AND NANOCLUSTERS, 2004, 5361 : 108 - 116
  • [49] Synthesis of silicon nanowire and crystalline carbon quantum dots heterostructure and study of photo response and photoluminescence property
    Sarkar, Sourav
    Ray, Unmesha
    Roy, Dipayan
    Banerjee, Diptonil
    Chattopadhyay, Kalyan Kumar
    MATERIALS LETTERS, 2021, 303
  • [50] Resonant-tunneling diode on the basis of silicon multilayer cathode
    Goncharuk, Nina M.
    2007 EUROPEAN MICROWAVE CONFERENCE, VOLS 1-4, 2007, : 1602 - 1605
12345