Quantum tunneling behavior of nanocrystalline silicon/crystalline silicon heterostructure diode

被引：0
|
作者：
Lu, J. J. [1 ]
Jiang, Z. Z. [1 ]
Chen, J. [1 ]
Pan, W. [1 ]
Shen, W. Z. [1 ]
机构：
[1] Shanghai Jiao Tong Univ, Dept Phys, Lab Condensed Matter Spect & Optoelect Phys, Shanghai 200030, Peoples R China
来源：
2008 2ND IEEE INTERNATIONAL NANOELECTRONICS CONFERENCE, VOLS 1-3 | 2008年
关键词：
D O I：
10.1109/INEC.2008.4585603
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report the observation of various quantum behaviors of nanocrystalline silicon/crystalline silicon heterostructure diodes. Tunneling has been proved to be the dominant transport mechanism for the device-grade diode operating below 80 K. For the sample which is composed by highly ordered nanocrystalline silicon, interesting physical phenomena have been revealed, which include high electron mobility, resonant tunneling and periodical negative differential conductivity under different reverse bias regions. A number of temperature dependent current-voltage measurements have been done to support our observations. Theoretical self-consistent calculations further explain the quantum tunneling mechanisms behind the experimental results.
引用
收藏
页码：794 / 797
页数：4
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