Strong band edge luminescence from InN films grown on Si substrates by electron cyclotron resonance-assisted molecular beam epitaxy

被引：75
|
作者：
Yodo, T [1 ]
Yona, H [1 ]
Ando, H [1 ]
Nosei, D [1 ]
Harada, Y [1 ]
机构：
[1] Osaka Inst Technol, Osaka 5358585, Japan
来源：
APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 06期
关键词：
D O I：
10.1063/1.1450255
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We observed strong band edge luminescence at 8.5-200 K from 200-880 nm thick InN films grown on 10 nm thick InN buffer layers on Si(001) and Si(111) substrates by electron cyclotron resonance-assisted molecular beam epitaxy. The InN film on the Si(001) substrate exhibited strong band edge photoluminescence (PL) emission at 1.814 eV at 8.5 K, tentatively assigned as donor to acceptor pair [DAP (alpha-InN)] emission from wurtzite-InN (alpha-InN) crystal grains, while those on Si(111) showed other stronger band edge PL emissions at 1.880, 2.081 and 2.156 eV, tentatively assigned as donor bound exciton [(DX)-X-0(alpha-InN)] from alpha-InN grains, DAP (beta-InN) and (DX)-X-0 (beta-InN) emissions from zinc blende-InN (beta-InN) grains, respectively. (C) 2002 American Institute of Physics.
引用
收藏
页码：968 / 970
页数：3
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