Strong enhancement of emissions from nanostructured ZnO thin films grown by plasma-assisted molecular-beam epitaxy on nanopored Si(001) substrates

被引:0
|
作者
Choi, Jun-Ho [1 ]
Han, Seok Kyu [1 ]
Hong, Soon-Ku [1 ]
Song, Jung-Hoon [2 ]
Jeong, Se Young [1 ]
Cho, You Suk [1 ]
Kim, Dojin [1 ]
Nam, Yoon Sung [3 ]
Baek, Kyung-Seon [3 ]
Chang, Soo-Kyung [3 ]
Yao, Takafumi [4 ]
机构
[1] Chungnam Natl Univ, Dept Mat Sci & Engn, Taejon 305764, South Korea
[2] Kongju Natl Univ, Dept Phys, Kong Ju 314701, South Korea
[3] Yonsei Univ, Dept Phys, Seoul 120749, South Korea
[4] Tohoku Univ, Interdisciplinary Res Ctr, Aoba Ku, Sendai, Miyagi 9808578, Japan
关键词
D O I
10.1002/pssa.200723482
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Nanostructured ZnO films were fabricated on nanopored Si(001) surfaces through reactive ion etching and plasma-assisted molecular-beam epitaxy techniques. Nanowall-like nanostructures were formed on the ZnO film surfaces depending on the thickness of the ZnO films. Significant enhancement of the photoluminescence intensity up to 15 fold was observed from the nanostructured ZnO films. We found that the emission properties of the film changed very sensitively with the nanostructure on the surface and the enhancement is closely related to the formations of nanostructures on the surface of the ZnO films, not at the interface between the films and the substrate. (c) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码:1598 / 1601
页数:4
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