ZnO Grown on (111) ZnS Substrates by Plasma-Assisted Molecular Beam Epitaxy

被引：5

作者：

Zhao, Kuaile ^{[1
]}

Wang, Shaoping ^{[2
]}

Shen, A. ^{[1
]}

机构：

[1] CUNY City Coll, Dept Elect Engn, New York, NY 10031 USA

[2] Fairfield Crystal Technol, New Milford, CT 06776 USA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2012年 / 41卷 / 08期

基金：

美国国家科学基金会;

关键词：

ZnO; ZnS; MBE; plasma-assisted; BUFFER LAYER; MBE GROWTH; THIN-FILMS; SAPPHIRE; LUMINESCENCE; QUANTUM; SI;

D O I：

10.1007/s11664-012-2137-z

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

ZnO thin films have been grown by plasma-assisted molecular beam epitaxy on (111) ZnS substrates. The films grown on Zn-face substrates showed better structural and optical properties compared with those grown on S-face substrates, as demonstrated by x-ray diffraction and photoluminescence measurements. Scanning electron microscopy measurements indicated that ZnO films grown on Zn-face substrates also have smoother surface morphology. It is also found that higher growth temperature yields films with better quality.

引用

页码：2151 / 2154

页数：4

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