A Low Phase Noise Colpitts VCO for Ku-band applications

被引：0
|
作者：
Wang, Yi [1 ,2 ]
Leenaerts, D. [1 ,2 ]
van der Heijden, E.
Mahmoudi, R. [1 ]
机构：
[1] Eindhoven Univ Technol, Mixed Signal Microelect Grp, POB 513, NL-5600 MB Eindhoven, Netherlands
[2] 2RF ADT, NXP Semiconductors, Eindhoven, Netherlands
来源：
2012 IEEE BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING (BCTM) | 2012年
关键词：
SiGe:C BiCMOS technology; Colpitts VCO; phase noise; Ku-band;
D O I：
暂无
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
A 12.74 GHz low phase noise Colpitts VCO has been designed and fabricated in a 0.25 mu m SiGe:C BiCMOS technology. The balanced VCO uses a transformer coupled tank and two additional inductors to reduce the current in the feedback loop. The efficiency of energy transfer from active devices to the tank has been improved by these two methods, which leads to a larger output swing for the same DC current. Measured phase noise is better than -100dBc /Hz at 100 kHz offset over the tuning range from 12.43 to 13.08GHz.
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页数：4
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