Properties of Iodine-Doped CdTe Layers on (211) Si Grown at High Substrate Temperatures by MOVPE

被引：1

作者：

Niraula, M. ^{[1
]}

Yasuda, K. ^{[1
]}

Torii, R. ^{[1
]}

Higashira, Y. ^{[1
]}

Tamura, R. ^{[1
]}

Chaudhari, B. S. ^{[1
]}

Kobayashi, T. ^{[1
]}

Goto, H. ^{[1
]}

Fujii, S. ^{[1
]}

Agata, Y. ^{[1
]}

机构：

[1] Nagoya Inst Technol, Grad Sch Engn, Showa Ku, Nagoya, Aichi 4668555, Japan

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2020年 / 49卷 / 11期

关键词：

CdTe epilayers; iodine doping; high substrate temperature; Si substrate; doping mechanism;

D O I：

10.1007/s11664-020-08420-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The properties of iodine-doped (211) CdTe layers grown on (211) Si substrates by metalorganic vapor-phase epitaxy at high substrate temperatures from 325 degrees C to 450 degrees C were studied. The growth rate of the doped layer increased with increasing substrate temperature before reaching a maximum value of 2.6 mu m/h at 425 degrees C, after which it decreased slightly. On the other hand, the room-temperature electron density showed a strong dependence on the Te/Cd precursor flow-rate ratios, where the electron density increased with a decreasing Te/Cd ratio. The highest electron density of 2.5x10(18)cm(-3)was obtained by growing the epilayer at a substrate temperature of 400 degrees C and Te/Cd ratio of 0.05. This was considered to be due to decreased donor compensation at a small Te/Cd ratio. Good correspondence was observed between the results obtained from Hall measurements and photoluminescence measurements.

引用

页码：6996 / 6999

页数：4

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