Properties of Iodine-Doped CdTe Layers on (211) Si Grown at High Substrate Temperatures by MOVPE

被引：1
|
作者：
Niraula, M. [1 ]
Yasuda, K. [1 ]
Torii, R. [1 ]
Higashira, Y. [1 ]
Tamura, R. [1 ]
Chaudhari, B. S. [1 ]
Kobayashi, T. [1 ]
Goto, H. [1 ]
Fujii, S. [1 ]
Agata, Y. [1 ]
机构：
[1] Nagoya Inst Technol, Grad Sch Engn, Showa Ku, Nagoya, Aichi 4668555, Japan
来源：
JOURNAL OF ELECTRONIC MATERIALS | 2020年 / 49卷 / 11期
关键词：
CdTe epilayers; iodine doping; high substrate temperature; Si substrate; doping mechanism;
D O I：
10.1007/s11664-020-08420-3
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The properties of iodine-doped (211) CdTe layers grown on (211) Si substrates by metalorganic vapor-phase epitaxy at high substrate temperatures from 325 degrees C to 450 degrees C were studied. The growth rate of the doped layer increased with increasing substrate temperature before reaching a maximum value of 2.6 mu m/h at 425 degrees C, after which it decreased slightly. On the other hand, the room-temperature electron density showed a strong dependence on the Te/Cd precursor flow-rate ratios, where the electron density increased with a decreasing Te/Cd ratio. The highest electron density of 2.5x10(18)cm(-3)was obtained by growing the epilayer at a substrate temperature of 400 degrees C and Te/Cd ratio of 0.05. This was considered to be due to decreased donor compensation at a small Te/Cd ratio. Good correspondence was observed between the results obtained from Hall measurements and photoluminescence measurements.
引用
收藏
页码：6996 / 6999
页数：4
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