High resolution transmission electron microscope analysis of CdSe/ZnSe strained layer superlattices grown on InP

被引：0
|
作者：
Nabetani, Y [1 ]
Kobayashi, Y [1 ]
Kato, T [1 ]
Matsumoto, T [1 ]
机构：
[1] Yamanashi Univ, Dept Elect Engn, Kofu, Yamanashi 4008511, Japan
来源：
PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 2002年 / 229卷 / 01期
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D O I：
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中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The lattice structure of CdSe/ZnSe strained layer superlattices grown on InP is investigated by cross-sectional high resolution electron microscopy. The Cd composition is obtained by lattice image analysis. The Cd composition is modulated along the growth direction. A gradual change of Cd composition is shown at the CdSe/ZnSe interface. The strain energy calculation shows that the formation of a ZnCdSe layer at the interface almost relieves the strain. X-ray diffraction spectra are simulated using the obtained modulation profile of Cd composition. The simulated results well reproduce experimentally observed spectra.
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页码：209 / 212
页数：4
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