Formation of Low Resistance and High Reflectivity Reflector on p-Type GaN Using Ni/Au/W/Ag Ohmic Contact

被引：3
|
作者：
Kim, Ja-Yeon [1 ]
Lee, Ji-Myon [2 ]
Kwon, Min-Ki [3 ]
机构：
[1] Korea Photon Technol Inst, LED Team, Kwangju 500460, South Korea
[2] Sunchon Natl Univ, Dept Mat Sci & Met Engn, Sunchon 540742, South Korea
[3] Chosun Univ, Dept Photon Engn, Kwangju 501759, South Korea
来源：
ELECTROCHEMICAL AND SOLID STATE LETTERS | 2012年 / 15卷 / 06期
关键词：
LIGHT-EMITTING-DIODES; OPTICAL-PROPERTIES; AG AGGLOMERATION; FILMS; EFFICIENCY; ELECTRODE;
D O I：
10.1149/2.026206esl
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
We investigate the properties of a Ni/Au/W/Ag reflector layer deposited on a p-GaN layer for use in high efficiency GaN flip-chip light-emitting diodes (LEDs) or vertical LEDs. The FCLEDs fabricated with Ni/Au/W/Ag contact showed good current-voltage characteristic and an enhanced the optical output power compared to those fabricated with Ni/Au/Ag contact due to the high reflectivity, smooth surface after annealing, and good Ohmic property of Ni/Au/W/Ag. These results clearly indicate that a Ni/Au/W/Ag contact on p-GaN constitutes a promising reflector and Ohmic scheme for achieving high-brightness LEDs. (C) 2012 The Electrochemical Society. [DOI: 10.1149/2.026206esl] All rights reserved.
引用
收藏
页码：H198 / H201
页数：4
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