Strong coupling of a single electron in silicon to a microwave photon

被引:235
|
作者
Mi, X. [1 ]
Cady, J. V. [1 ,3 ]
Zajac, D. M. [1 ]
Deelman, P. W. [2 ]
Petta, J. R. [1 ]
机构
[1] Princeton Univ, Dept Phys, Princeton, NJ 08544 USA
[2] HRL Labs LLC, 3011 Malibu Canyon Rd, Malibu, CA 90265 USA
[3] Univ Calif Santa Barbara, Dept Phys, Santa Barbara, CA 93106 USA
基金
美国国家科学基金会;
关键词
QUANTUM STATE; CAVITY; CIRCUIT; STORAGE; SPINS; DOTS;
D O I
10.1126/science.aal2469
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Silicon is vital to the computing industry because of the high quality of its native oxide and well-established doping technologies. Isotopic purification has enabled quantum coherence times on the order of seconds, thereby placing silicon at the forefront of efforts to create a solid-state quantum processor. We demonstrate strong coupling of a single electron in a silicon double quantum dot to the photonic field of a microwave cavity, as shown by the observation of vacuum Rabi splitting. Strong coupling of a quantum dot electron to a cavity photon would allow for long-range qubit coupling and the long-range entanglement of electrons in semiconductor quantum dots.
引用
收藏
页码:156 / +
页数:3
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