Characterization of niobium oxide films prepared by reactive DC magnetron sputtering

被引:0
|
作者
Venkataraj, S [1 ]
Drese, R
Kappertz, O
Jayavel, R
Wuttig, M
机构
[1] Rhein Westfal TH Aachen, Inst Phys 1, D-52056 Aachen, Germany
[2] Anna Univ, Ctr Crystal Growth, Chennai 600025, India
[3] Forschungszentrum Julich, ISG3, D-52428 Julich, Germany
关键词
D O I
10.1002/1521-396X(200112)188:3<1047::AID-PSSA1047>3.0.CO;2-J
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Niobium oxide films have been prepared on glass and Si(100) substrates by reactive dc magnetron sputtering, of a metallic Nb target in an argon-oxygen atmosphere. The properties of the films as a function of oxygen partial pressure have been studied systematically by Rutherford backscattering spectroscopy. X-ray diffraction, X-ray reflectometry and optical spectroscopy. Rutherford backscattering studies show that the films are substoichiometric at lower oxygen flow while stoichiometric films can be formed above 7.5 sccm O-2 flow. Grazing incidence X-ray diffraction studies show that the films are amorphous. X-ray reflectometry was used to determine the sputter rate, density and surface roughness of the films. The films prepared at lower oxygen flow rates had a higher density than those prepared at higher oxygen flow rates. For appropriate oxygen flow rates fully transparent niobium oxide films can be grown with rates up to 0.5 nm/s for a constant cathode current of 900 mA. From optical spectroscopy measurements of reflectance and transmittance we have determined the optical constants such as the refractive index (n), extinction coefficient (k) and band gap (E.) as well as the film thickness. For the fully transparent films prepared above 7.5 sccm O-2 flow rate a band gap of 3.5 to 3.6 eV is obtained. Optical spectroscopy measurements show that the refractive index of the films decreases upon increasing oxygen flow rate and this finding is related to a decrease of density upon increasing oxygen flow.
引用
收藏
页码:1047 / 1058
页数:12
相关论文
共 50 条
  • [1] Characterization of niobium oxide electrochromic thin films prepared by reactive dc magnetron sputtering
    Yoshimura, K
    Miki, T
    Iwama, S
    Tanemura, S
    [J]. THIN SOLID FILMS, 1996, 281 : 235 - 238
  • [2] NIOBIUM OXIDE ELECTROCHROMIC THIN-FILMS PREPARED BY REACTIVE DC MAGNETRON SPUTTERING
    YOSHIMURA, K
    MIKI, T
    IWAMA, S
    TANEMURA, S
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1995, 34 (10A): : L1293 - L1296
  • [3] Electrochromic properties of niobium oxide thin films prepared by DC magnetron sputtering
    Yoshimura, K
    Miki, T
    Tanemura, S
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1997, 144 (09) : 2982 - 2985
  • [4] Properties of Niobium Oxide Films Deposited by Pulsed DC Reactive Magnetron Sputtering
    Shao, Yuchuan
    Yi, Kui
    Fang, Ming
    Zhang, Junchao
    [J]. PACIFIC RIM LASER DAMAGE 2011: OPTICAL MATERIALS FOR HIGH POWER LASERS, 2012, 8206
  • [5] Thermochromic properties of vanadium oxide films prepared by dc reactive magnetron sputtering
    Cui, Hai-Ning
    Teixeira, Vasco
    Meng, Li-Jian
    Wang, Rong
    Gao, Jin-Yue
    Fortunato, Elvira
    [J]. THIN SOLID FILMS, 2008, 516 (07) : 1484 - 1488
  • [6] Thermal stability of lead oxide films prepared by reactive DC magnetron sputtering
    Venkataraj, S
    Kappertz, O
    Drese, R
    Liesch, C
    Jayavel, R
    Wuttig, M
    [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 2002, 194 (01): : 192 - 205
  • [7] Characterization of NbTiN thin films prepared by reactive DC-magnetron sputtering
    Matsunaga, T
    Maezawa, H
    Noguchi, T
    [J]. IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY, 2003, 13 (02) : 3284 - 3287
  • [8] Growth and characterization of NiO thin films prepared by dc reactive magnetron sputtering
    Reddy, A. Mallikarjuna
    Reddy, A. Sivasankar
    Lee, Kee-Sun
    Reddy, P. Sreedhara
    [J]. SOLID STATE SCIENCES, 2011, 13 (02) : 314 - 320
  • [9] Chemical characterization of as-deposited microcrystalline indium oxide films prepared by reactive dc magnetron sputtering
    Xirouchaki, C
    Moschovis, K
    Chatzitheodoridis, E
    Kiriakidis, G
    Morgen, P
    [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1998, 67 (03): : 295 - 301
  • [10] Chemical characterization of as-deposited microcrystalline indium oxide films prepared by reactive dc magnetron sputtering
    C. Xirouchaki
    K. Moschovis
    E. Chatzitheodoridis
    G. Kiriakidis
    P. Morgen
    [J]. Applied Physics A, 1998, 67 : 295 - 301