Growth and Luminescent Properties of (Tb, Gd)3Al5O12:Ce Single Crystalline Films

被引：0
|
作者：
Zorenko, Yu. [1 ,2 ]
Gorbenko, V. [1 ,2 ]
Zorenko, T. [1 ,2 ]
Vasylkiv, Ya. [2 ]
Fabisiak, K. [1 ]
Wrzesinski, H. [1 ]
Nikl, M. [3 ]
Mares, J. [3 ]
Beitlerova, A. [3 ]
Kucerkova, R. [3 ]
Fedorov, A. [4 ]
机构：
[1] Kazimierz Wielki Univ Bydgoszcz, Inst Phys, Bydgoszcz, Poland
[2] Ivan Franko Natl Univ Lviv, Dept Elect, Lvov, Ukraine
[3] Acad Sci Czech Republ, Inst Phys, Prague, Czech Republic
[4] NAS Ukraine, Inst Scintillat Mat, Kharkov, Ukraine
来源：
2014 IEEE INTERNATIONAL CONFERENCE ON OXIDE MATERIALS FOR ELECTRONIC ENGINEERING (OMEE) | 2014年
关键词：
liquid phase epitaxy; single crystalline films; (Tb; Gd)(3)Al5O12:Ce garnets; Ce3+ dopant;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This work is dedicated to studying the growth processes and luminescent properties of the single crystalline films of Ce doped Tb3-xGdxAl5O12:Ce garnets, x=0 divided by 2.5, grown by the Liquid Phase Epitaxy (LPE) method from melt-solutions based on the PbO-B2O3 flux.
引用
收藏
页码：149 / 150
页数：2
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