Growth and Luminescent Properties of (Tb, Gd)3Al5O12:Ce Single Crystalline Films

被引：0

作者：

Zorenko, Yu. ^{[1
,2
]}

Gorbenko, V. ^{[1
,2
]}

Zorenko, T. ^{[1
,2
]}

Vasylkiv, Ya. ^{[2
]}

Fabisiak, K. ^{[1
]}

Wrzesinski, H. ^{[1
]}

Nikl, M. ^{[3
]}

Mares, J. ^{[3
]}

Beitlerova, A. ^{[3
]}

Kucerkova, R. ^{[3
]}

Fedorov, A. ^{[4
]}

机构：

[1] Kazimierz Wielki Univ Bydgoszcz, Inst Phys, Bydgoszcz, Poland

[2] Ivan Franko Natl Univ Lviv, Dept Elect, Lvov, Ukraine

[3] Acad Sci Czech Republ, Inst Phys, Prague, Czech Republic

[4] NAS Ukraine, Inst Scintillat Mat, Kharkov, Ukraine

来源：

2014 IEEE INTERNATIONAL CONFERENCE ON OXIDE MATERIALS FOR ELECTRONIC ENGINEERING (OMEE) | 2014年

关键词：

liquid phase epitaxy; single crystalline films; (Tb; Gd)(3)Al5O12:Ce garnets; Ce3+ dopant;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This work is dedicated to studying the growth processes and luminescent properties of the single crystalline films of Ce doped Tb3-xGdxAl5O12:Ce garnets, x=0 divided by 2.5, grown by the Liquid Phase Epitaxy (LPE) method from melt-solutions based on the PbO-B2O3 flux.

引用

页码：149 / 150

页数：2

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