MOVPE and MBE Growth of Semiconductor Thin Films

被引：2
|
作者：
Sharma, Tarun Kumar [1 ]
机构：
[1] Raja Ramanna Ctr Adv Technol, Semicond Laser Sect, Indore 452103, Madhya Pradesh, India
来源：
INDIAN VACUUM SOCIETY SYMPOSIUM ON THIN FILMS: SCIENCE & TECHNOLOGY | 2012年 / 1451卷
关键词：
MOVPE; MBE; Quantum Well; PL; HRXRD;
D O I：
10.1063/1.4732359
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Fundamental aspects of MBE and MOVPE growth techniques are briefly discussed. The capabilities and limitation of the two epitaxial growth techniques are summarized. A few examples of the MOVPE and MBE growth of high crystalline quality semiconductor thin films are also given including the characterization results obtained from spectroscopic and high resolution x-ray diffraction methods.
引用
收藏
页码：18 / 23
页数：6
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