Study of growth of [111]-oriented CdTe thin films by MBE

被引：0

作者：

Zhang Bing-Po ^{[1
]}

Cai Chun-Feng ^{[1
]}

Cai Xi-Kun ^{[1
]}

Wu Hui-Zhen ^{[1
]}

Wang Miao ^{[1
]}

机构：

[1] Zhejiang Univ, Dept Phys, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China

来源：

ACTA PHYSICA SINICA | 2012年 / 61卷 / 04期

基金：

中国国家自然科学基金;

关键词：

CdTe; MBE; RHEED; XRD; BEAM EPITAXIAL-GROWTH; SUPERLATTICES; LAYERS;

D O I：

10.7498/aps.61.046802

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

In this study, CdTe(111) thin films were epitaxially grown on freshly cleaved BaF2 substrate using molecular beam epitaxy (MBE). In situ characterization of reflection high energy electron diffraction (RHEED) reveals the growth mode of transition from 2D to 3D. XRD analysis results verify the single crystalline property of the as-grown films. Theoretical method is adopted to fit the measured near infrared transmission spectrum, revealing a CdTe energy gap of 1.511 eV at room temperature.

引用

页数：5

共 16 条

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