Reliability of mesa-structure InAlCaAs-InAlAs superlattice avalanche photodiodes

被引：28
|
作者：
Watanabe, I
Tsuji, M
Hayashi, M
Makita, K
Taguchi, K
机构：
[1] Opto-Electronics Res. Laboratories, NEC Corporation, Tsukuba, Ibaraki 305
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 1996年 / 8卷 / 06期
关键词：
D O I：
10.1109/68.502107
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Reliability tests of mesa-structure InAlGaAs-InAlAs superlattice avalanche photodiodes (SL-APD's) have been performed by accelerated aging at three different temperatures for the first time. The lifetime of the SL-APD's is estimated to be over 1.0 x 10(5) hours at 50 degrees C with a degradation activation energy of 1 eV. These results indicate that the SL-APD's have a reliable lifetime for 2.5-10 Gb/s LAN applications.
引用
收藏
页码：824 / 826
页数：3
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