Reliability of mesa-structure InAlCaAs-InAlAs superlattice avalanche photodiodes

被引：28
|
作者：
Watanabe, I
Tsuji, M
Hayashi, M
Makita, K
Taguchi, K
机构：
[1] Opto-Electronics Res. Laboratories, NEC Corporation, Tsukuba, Ibaraki 305
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 1996年 / 8卷 / 06期
关键词：
D O I：
10.1109/68.502107
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Reliability tests of mesa-structure InAlGaAs-InAlAs superlattice avalanche photodiodes (SL-APD's) have been performed by accelerated aging at three different temperatures for the first time. The lifetime of the SL-APD's is estimated to be over 1.0 x 10(5) hours at 50 degrees C with a degradation activation energy of 1 eV. These results indicate that the SL-APD's have a reliable lifetime for 2.5-10 Gb/s LAN applications.
引用
收藏
页码：824 / 826
页数：3
相关论文
共 39 条
  • [1] Reliability of mesa-structure InAlGaAs-InAlAs superlattice avalanche photodiodes
    NEC Corp, Ibaraki, Japan
    IEEE Photonics Technol Lett, 6 (824-826):
  • [2] Mushroom Mesa Structure for InAlAs–InGaAs Avalanche Photodiodes
    N. A. Maleev
    A. G. Kuzmenkov
    M. M. Kulagina
    A. P. Vasyl’ev
    S. A. Blokhin
    S. I. Troshkov
    A. V. Nashchekin
    M. A. Bobrov
    A. A. Blokhin
    K. O. Voropaev
    V. E. Bugrov
    V. M. Ustinov
    Technical Physics Letters, 2023, 49 : S215 - S218
  • [3] Mushroom Mesa Structure for InAlAs-InGaAs Avalanche Photodiodes
    Maleev, N. A.
    Kuzmenkov, A. G.
    Kulagina, M. M.
    Vasyl'ev, A. P.
    Blokhin, S. A.
    Troshkov, S. I.
    Nashchekin, A. V.
    Bobrov, M. A.
    Blokhin, A. A.
    Voropaev, K. O.
    Bugrov, V. E.
    Ustinov, V. M.
    TECHNICAL PHYSICS LETTERS, 2023, 49 (SUPPL 3) : S215 - S218
  • [4] Design and performance of InAlGaAs/InAlAs superlattice avalanche photodiodes
    Watanabe, I
    Tsuji, M
    Hayashi, M
    Makita, K
    Taguchi, K
    JOURNAL OF LIGHTWAVE TECHNOLOGY, 1997, 15 (06) : 1012 - 1019
  • [5] SATURATION OF MULTIPLICATION FACTOR IN INGAASP/INALAS SUPERLATTICE AVALANCHE PHOTODIODES
    KAGAWA, T
    KAWAMURA, Y
    IWAMURA, H
    APPLIED PHYSICS LETTERS, 1993, 62 (10) : 1122 - 1124
  • [6] InAlGaAs/InAlAs quaternary well superlattice avalanche photodiodes (APDs)
    Taguchi, K
    22ND EUROPEAN CONFERENCE ON OPTICAL COMMUNICATIONS, PROCEEDINGS, VOLS 1-6: CO-LOCATED WITH: 2ND EUROPEAN EXHIBITION ON OPTICAL COMMUNICATION - EEOC '96, 1996, : A137 - A144
  • [7] 10-Gbps InAlAs/InGaAs superlattice avalanche photodiodes
    Kim, HS
    Choi, JH
    Bang, HM
    Burm, J
    Jee, Y
    Yun, SW
    Kim, MD
    Choo, AG
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2001, 39 (01) : 28 - 31
  • [8] High-Speed 1550-nm Avalanche Photodiode Based on InAlAs-Multiplicaltion and Mesa-Structure
    Lin, Po-Ju
    Ho, Wen-Jeng
    Liu, Jheng-Jie
    Teng, Chi-Jen
    Yu, Chia-Chun
    Li, Yen-Chu
    2020 OPTO-ELECTRONICS AND COMMUNICATIONS CONFERENCE (OECC 2020), 2020,
  • [9] Analytical Model for Obtaining the Ionization Rate Ratio of Mesa InAlAs Avalanche Photodiodes
    Nakata, Takeshi
    Kasahara, Kenichi
    Makita, Kikuo
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2010, 49 (05) : 0543021 - 0543025
  • [10] The Fabrication and Characterization of InAlAs/InGaAs APDs Based on a Mesa-Structure with Polyimide Passivation
    Liu, Jheng-Jie
    Ho, Wen-Jeng
    Chen, June-Yan
    Lin, Jian-Nan
    Teng, Chi-Jen
    Yu, Chia-Chun
    Li, Yen-Chu
    Chang, Ming-Jui
    SENSORS, 2019, 19 (15)
1234