Low write-current magnetic random access memory cell with anisotropy-varied free layers

被引：5

作者：

Fukami, S. ^{[1
]}

Honjo, H. ^{[1
]}

Suzuki, T. ^{[1
]}

Ishiwata, N. ^{[1
]}

机构：

[1] NEC Corp Ltd, Device Platforms Res Labs, Kanagawa 2291198, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 2008年 / 104卷 / 11期

关键词：

We propose a magnetic random access memory (MRAM) cell that utilizes field-induced switching and is applicable to high-speed memories. The MRAM cell; called the shape-varying MRAM cell; has three free layers; each having different shapes and functions; and achieves low write-current switching with high thermal stability and high external field robustness. We show analytically that one of the layers contributes to the low write-current switching and another contributes to the thermal stability. We also show the results of a micromagnetic simulation; in which write current of 100; and external field robustness of >32 Oe were obtained. © 2008 American Institute of Physics;

D O I：

10.1063/1.3032894

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We propose a magnetic random access memory (MRAM) cell that utilizes field-induced switching and is applicable to high- speed memories. The MRAM cell, called the shape-varying MRAM cell, has three free layers, each having different shapes and functions, and achieves low write-current switching with high thermal stability and high external field robustness. We show analytically that one of the layers contributes to the low write-current switching and another contributes to the thermal stability. We also show the results of a micromagnetic simulation, in which write current of <0.5 mA, write time of <2 ns, energy barrier (Delta E/k(B)T) > 100, and external field robustness of >32 Oe were obtained. (C) 2008 American Institute of Physics. [DOI: 10.1063/1.3032894]

引用

页数：4

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