Low-energy Resistive Random Access Memory Devices with No Need for a Compliance Current

被引：27

作者：

Xu, Zedong ^{[1
]}

Yu, Lina ^{[1
]}

Wu, Yong ^{[1
]}

Dong, Chang ^{[1
]}

Deng, Ning ^{[2
]}

Xu, Xiaoguang ^{[1
]}

Miao, J. ^{[1
]}

Jiang, Yong ^{[1
]}

机构：

[1] Univ Sci & Technol Beijing, Sch Mat Sci & Engn, State Key Lab Adv Met & Mat, Beijing 100083, Peoples R China

[2] Tsinghua Univ, Inst Microelect, Beijing 100084, Peoples R China

来源：

SCIENTIFIC REPORTS | 2015年 / 5卷

基金：

美国国家科学基金会;

关键词：

MECHANISMS;

D O I：

10.1038/srep10409

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

A novel resistive random access memory device is designed with SrTiO3/La2/3Sr1/3MnO3 (LSMO)/MgAl2O4 (MAO)/Cu structure, in which metallic epitaxial LSMO is employed as the bottom electrode rather than traditional metal materials. In this device, the critical external compliance current is no longer necessary due to the high self-resistance of LSMO. The LMSO bottom electrode can act as a series resistor to offer a compliance current during the set process. Besides, the device also has excellent switching features which are originated in the formation of Cu filaments under external voltage. Therefore it provides the possibility of reducing power consumption and accelerating the commercialization of resistive switching devices.

引用

页数：6

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