Enhancement of electrical properties in Al-doped ZnO films by tuning dc bias voltage during radio frequency magnetron sputtering

被引：6
|
作者：
No, Y. S. [1 ,2 ]
Park, D. H. [1 ]
Kim, T. W. [2 ]
Choi, J. W. [3 ]
Angadi, B. [4 ]
Choi, W. K. [1 ]
机构：
[1] Korea Inst Sci & Technol, Future Convergence Res Div, Interface Control Res Ctr, Seoul 136701, South Korea
[2] Hanyang Univ, Div Elect & Comp Engn, Adv Semicond Res Ctr, Seoul 133791, South Korea
[3] Korea Inst Sci & Technol, Future Convergence Res Div, Ctr Elect Mat, Seoul 136701, South Korea
[4] Bangalore Univ, Dept Phys, Bangalore 560056, Karnataka, India
来源：
CURRENT APPLIED PHYSICS | 2012年 / 12卷
关键词：
Electrical properties; Structural properties; Al doped zinc oxide; Rf-sputtering; Transparent; ZINC-OXIDE FILMS; SOLAR-CELL; THIN-FILMS; ELECTRODE;
D O I：
10.1016/j.cap.2012.05.022
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Al-doped ZnO (AZO) thin films were deposited at room temperature on glass substrates by rf magnetron sputtering with simultaneous dc bias through an external inductor coil. The deposition rates of AZO films deposited using simultaneous rf and dc power along with an inductor coil were 20% higher than those deposited using only rf power. The effects of simultaneous rf and dc bias voltage during the deposition of AZO films were investigated in terms of their resistivity and compressive stress. It was observed that the AZO films deposited at 120 W rf power with 600 mu H inductor coil exhibit the lowest resistivity of 6.71 x 10(-4) Omega.cm. (c) 2012 Elsevier B.V. All rights reserved.
引用
收藏
页码：S71 / S75
页数：5
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