Effects of substrate on the structural, electrical and optical properties of Al-doped ZnO films prepared by radio frequency magnetron sputtering

被引:75
|
作者
Li, C. [1 ]
Furuta, M. [1 ]
Matsuda, T. [1 ]
Hiramatsu, T. [1 ]
Furuta, H. [1 ]
Hirao, T. [1 ]
机构
[1] Kochi Univ Technol, Res Inst Nanodevice, Kochi 7828502, Japan
基金
日本科学技术振兴机构;
关键词
Al-doped zinc oxide; Radio-frequency magnetron sputtering; Substrates selection; Thickness; X-ray diffraction; Electrical properties and measurements; Transmittance; TRANSPARENT THIN-FILMS; TEMPERATURE;
D O I
10.1016/j.tsf.2008.11.103
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Transparent and conductive Al-doped ZnO (AZO) thin films were deposited on substrates including alkali-free glass, quartz glass, Si, and SiO2 buffer layer on alkali-free glass by using radio frequency magnetron sputtering. The effects of different substrates on the structural, electrical and optical properties of the AZO films were investigated. It was found that the crystal structures were remarkably influenced by the type of the substrates due to their different thermal expansion coefficients, lattice mismatch and flatness. The AZO film (100 nm in thickness) deposited on the quartz glass exhibited the best crystallinity, followed sequentially by those deposited on the Si, the SiO2 buffer layer, and the alkali-free glass. The film deposited on the quartz glass showed the lowest resistivity of 5.14x10(-4) Omega cm among all the films, a carrier concentration of 1.97x10(21) cm(-3) and a Hall mobility of 6.14 cm(2)/v.s. The average transmittance of this film was above 90% in the visible light spectrum range. Investigation into the thickness-dependence of the AZO films revealed that the crystallinity was improved with increasing thickness and decreasing surface roughness, accompanied with a decrease in the film resistivity. (C) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码:3265 / 3268
页数:4
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