Epitaxial growth of VO2 by periodic annealing

被引：52
|
作者：
Tashman, J. W. [1 ]
Lee, J. H. [1 ,2 ]
Paik, H. [1 ]
Moyer, J. A. [3 ,4 ]
Misra, R. [5 ,6 ]
Mundy, J. A. [7 ]
Spila, T. [4 ]
Merz, T. A. [1 ]
Schubert, J. [8 ]
Muller, D. A. [7 ,9 ]
Schiffer, P. [3 ,4 ]
Schlom, D. G. [1 ,9 ]
机构：
[1] Cornell Univ, Dept Mat Sci & Engn, Ithaca, NY 14853 USA
[2] Korea Atom Energy Res Inst, Div Neutron Sci, Taejon 305353, South Korea
[3] Univ Illinois, Dept Phys, Urbana, IL 61801 USA
[4] Univ Illinois, Frederick Seitz Mat Res Lab, Urbana, IL 61801 USA
[5] Penn State Univ, Dept Phys, University Pk, PA 16802 USA
[6] Penn State Univ, Mat Res Inst, University Pk, PA 16802 USA
[7] Cornell Univ, Sch Appl & Engn Phys, Ithaca, NY 14853 USA
[8] Res Ctr Julich, Peter Grunberg Inst, PGI 9 IT, JARA FIT, D-52425 Julich, Germany
[9] Kavli Inst Cornell Nanoscale Sci, Ithaca, NY 14853 USA
来源：
APPLIED PHYSICS LETTERS | 2014年 / 104卷 / 06期
基金：
美国国家科学基金会;
关键词：
METAL-INSULATOR-TRANSITION; ULTRATHIN FILMS; THIN-FILMS; VANADIUM-OXIDE; SURFACE;
D O I：
10.1063/1.4864404
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report the growth of ultrathin VO2 films on rutile TiO2 (001) substrates via reactive molecular-beam epitaxy. The films were formed by the cyclical deposition of amorphous vanadium and its subsequent oxidation and transformation to VO2 via solid-phase epitaxy. Significant metal-insulator transitions were observed in films as thin as 2.3 nm, where a resistance change Delta R/R of 25 was measured. Low angle annular dark field scanning transmission electron microscopy was used in conjunction with electron energy loss spectroscopy to study the film/substrate interface and revealed the vanadium to be tetravalent and the titanium interdiffusion to be limited to 1.6 nm. (C) 2014 AIP Publishing LLC.
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页数：5
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