Epitaxial growth of VO2 by periodic annealing

被引：52

作者：

Tashman, J. W. ^{[1
]}

Lee, J. H. ^{[1
,2
]}

Paik, H. ^{[1
]}

Moyer, J. A. ^{[3
,4
]}

Misra, R. ^{[5
,6
]}

Mundy, J. A. ^{[7
]}

Spila, T. ^{[4
]}

Merz, T. A. ^{[1
]}

Schubert, J. ^{[8
]}

Muller, D. A. ^{[7
,9
]}

Schiffer, P. ^{[3
,4
]}

Schlom, D. G. ^{[1
,9
]}

机构：

[1] Cornell Univ, Dept Mat Sci & Engn, Ithaca, NY 14853 USA

[2] Korea Atom Energy Res Inst, Div Neutron Sci, Taejon 305353, South Korea

[3] Univ Illinois, Dept Phys, Urbana, IL 61801 USA

[4] Univ Illinois, Frederick Seitz Mat Res Lab, Urbana, IL 61801 USA

[5] Penn State Univ, Dept Phys, University Pk, PA 16802 USA

[6] Penn State Univ, Mat Res Inst, University Pk, PA 16802 USA

[7] Cornell Univ, Sch Appl & Engn Phys, Ithaca, NY 14853 USA

[8] Res Ctr Julich, Peter Grunberg Inst, PGI 9 IT, JARA FIT, D-52425 Julich, Germany

[9] Kavli Inst Cornell Nanoscale Sci, Ithaca, NY 14853 USA

来源：

APPLIED PHYSICS LETTERS | 2014年 / 104卷 / 06期

基金：

美国国家科学基金会;

关键词：

METAL-INSULATOR-TRANSITION; ULTRATHIN FILMS; THIN-FILMS; VANADIUM-OXIDE; SURFACE;

D O I：

10.1063/1.4864404

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the growth of ultrathin VO2 films on rutile TiO2 (001) substrates via reactive molecular-beam epitaxy. The films were formed by the cyclical deposition of amorphous vanadium and its subsequent oxidation and transformation to VO2 via solid-phase epitaxy. Significant metal-insulator transitions were observed in films as thin as 2.3 nm, where a resistance change Delta R/R of 25 was measured. Low angle annular dark field scanning transmission electron microscopy was used in conjunction with electron energy loss spectroscopy to study the film/substrate interface and revealed the vanadium to be tetravalent and the titanium interdiffusion to be limited to 1.6 nm. (C) 2014 AIP Publishing LLC.

引用

页数：5

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