Characteristics of Bi3.25La0.75Ti3O12 thin films on p-Si with a buffer layer of Bi4Ti3O12 prepared by sol-gel method

被引：0
|
作者：
Jun Yu [1 ]
Guo Dong-yun [1 ]
Wang Yun-bo [1 ]
Gao Jun-xiong [1 ]
机构：
[1] Huazhong Univ Sci & Technol, Dept Elect Sci & Technol, Wuhan 430074, Peoples R China
来源：
INTEGRATED FERROELECTRICS | 2006年 / 79卷
基金：
中国国家自然科学基金;
关键词：
ferroelectric thin film; Bi3.25La0.75Ti3O12; Bi4Ti3O12; sol-gel method;
D O I：
10.1080/10584580600657567
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The Bi3.25La0.75Ti3O12 thin films with a buffer layer of Bi4Ti3O12 thin film are deposited on p-Si(100) substrates by Sol-Gel method. The P-E hysteresis loops and current-voltage curve of the Bi3.25La0.75Ti3O12/Bi4Ti3O12 film system are measured respectively. The results are performed and discussed.
引用
收藏
页码：89 / 95
页数：7
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