Investigation on doping dependency of solution-processed Ga-doped ZnO thin film transistor

被引：124

作者：

Park, Won Jun ^{[1
]}

Shin, Hyun Soo ^{[1
]}

Du Ahn, Byung ^{[1
]}

Kim, Gun Hee ^{[1
]}

Lee, Seung Min ^{[1
]}

Kim, Kyung Ho ^{[1
]}

Kim, Hyun Jae ^{[1
]}

机构：

[1] Yonsei Univ, Sch Elect & Elect Engn, Seoul 120749, South Korea

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 08期

关键词：

D O I：

10.1063/1.2976309

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

doped ZnO (GZO) thin film transistors (TFTs) were fabricated based on the solution-processed method and GZO TFTs were investigated according to the variation of the Ga doping concentration [Ga/Zn (%)]. A field-effect mobility of 1.63 cm(2)/V s and a drain current on/off ratio of 4.17 X 10(6) were observed in the 5.4 % Ga-doped TFT. This result shows good agreement with its structural properties and electrical properties of the GZO channel layer. It is believed that the optimal and desirable electrical properties of the TFTs can be obtained by adjusting the Ga doping concentration. (C) 2008 American Institute of Physics.

引用

页数：3

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