Suppression of Bipolar Degradation in 4H-SiC Power Devices by Carrier Lifetime Control

被引：4

作者：

Tsuchida, H. ^{[1
]}

Murata, K. ^{[1
]}

Tawara, T. ^{[2
,3
]}

Miyazato, M. ^{[2
,3
]}

Miyazawa, T. ^{[1
]}

Maeda, K. ^{[1
]}

机构：

[1] Cent Res Inst Elect Power Ind CRIEPI, Yokosuka, Kanagawa, Japan

[2] Natl Inst Adv Ind Sci & Technol, Ibaraki, Japan

[3] Fuji Elect Co Ltd, Nagano, Japan

来源：

2019 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) | 2019年

关键词：

D O I：

10.1109/iedm19573.2019.8993530

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Bipolar degradation phenomenon, in which the on-state forward voltage increases with the expansion of stacking faults, is a significant issue for practical applications of 4H-SiC bipolar devices such as PiN diodes and IGBTs. This paper addresses methods realizing suppression of the degradation phenomenon by adopting carrier lifetime control techniques.

引用

页数：4

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