Impact of mesa and planar processes on the radiation hardness of Si detectors

被引：0

作者：

Casse, G ^{[1
]}

Glaser, M

Grigoriev, E

Lemeilleur, F

Ruzin, A

Sopko, B

Taffard, A

机构：

[1] CERN, CH-1211 Geneva 23, Switzerland

[2] ASP Assoc Sviluppo Sci Piemonte, I-10133 Turin, Italy

[3] Czech Tech Univ, Prague 16607 6, Czech Republic

[4] Brunel Univ, Uxbridge UB8 3PH, Middx, England

来源：

NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA A-NUCLEI PARTICLES AND FIELDS | 1999年 / 112卷 / 1-2期

关键词：

D O I：

暂无

中图分类号：

O412 [相对论、场论]; O572.2 [粒子物理学];

学科分类号：

摘要：

Various types of silicon mono-crystals (epitaxial of different thickness, standard and oxygenated float zone material) have been grown and processed with mesa and planar technologies to produce 5 x 5 mm(2) pad detectors. The detectors have been irradiated with 24 GeV/c protons. Electrical properties of the detectors have been studied, before and after irradiation, in order to find the correlation with the material type, the fabrication process and the radiation hardness.

引用

页码：1 / 12

页数：12

共 50 条

[41] Radiation hardness properties of MSM structure gallium arsenide detectors
Li, Cheng
Chen, Hongfang
Wu, Chong
Zhang, Yongming
Xu, Zizong
Le, Yi
Shao, Chuanfen
Shi, Changxin
2000, Sci Publ House (24):
[42] Radiation hardness properties of MSM structure gallium arsenide detectors
Li, C
Chen, HF
Wu, C
Zhang, YM
Xu, ZZ
Le, Y
Shao, CF
Shi, CX
HIGH ENERGY PHYSICS AND NUCLEAR PHYSICS-CHINESE EDITION, 2000, 24 (05): : 431 - 438
[43] Radiation hardness of MSM biasing structures for GaAs microstrip detectors
Physikalisches Inst, RWTH Aachen, Aachen, Germany
Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1997, 388 (03) : 390 - 394
[44] Radiation hardness of semiconductor detectors for high-energy physics
Khludkov, SS
Stepanov, VE
Tolbanov, OP
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1996, 29 (06) : 1559 - 1563
[45] Enhanced radiation hardness and signal recovery in thin diamond detectors
Skukan, N.
Sudic, I.
Pomorski, M.
Kada, W.
Jaksic, M.
AIP ADVANCES, 2019, 9 (02)
[46] Radiation hardness of three-dimensional polycrystalline diamond detectors
Lagomarsino, Stefano
Bellini, Marco
Corsi, Chiara
Cindro, Vladimir
Kanxheri, Keida
Morozzi, Arianna
Passeri, Daniele
Servoli, Leonello
Schmidt, Christian J.
Sciortino, Silvio
APPLIED PHYSICS LETTERS, 2015, 106 (19)
[47] Radiation hardness of SiC ion detectors under relativistic protons
Ivanov, AM
Strokan, NB
Davydov, DV
Savkina, NS
Lebedev, AA
Mironov, YT
Ryabov, GA
Ivanov, EM
SEMICONDUCTORS, 2001, 35 (04) : 481 - 484
[48] Radiation hardness of gallium doped low gain avalanche detectors
Kramberger, G.
Carulla, M.
Cavallaro, E.
Cindro, V
Flores, D.
Galloway, Z.
Grinstein, S.
Hidalgo, S.
Fadeyev, V
Lange, J.
Mandic, I
Merlos, A.
McKinney-Martinez, F.
Mikuz, M.
Quirion, D.
Pellegrini, G.
Petek, M.
Sadrozinski, H. F-W
Seiden, A.
Zavrtanik, M.
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2018, 898 : 53 - 59
[49] Radiation hardness of the HERA-B silicon microstrip detectors
Pugatch, V
Abt, I
Bauer, C
Bräuer, M
Dressel, M
Glebe, T
Hofmann, W
Knöpfle, KT
Masciocchi, S
Moshous, B
Perschke, T
Riechmann, K
Schaller, S
Schmelling, M
Schwingenheuer, B
Sexauer, E
Trunk, U
Wanke, R
Wagner, W
Zurheide, F
NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA A-NUCLEI PARTICLES AND FIELDS, 1999, 112 (11): : 1383 - 1389
[50] Radiation hardness of SiC ion detectors under relativistic protons
A. M. Ivanov
N. B. Strokan
D. V. Davydov
N. S. Savkina
A. A. Lebedev
Yu. T. Mironov
G. A. Ryabov
E. M. Ivanov
Semiconductors, 2001, 35 : 481 - 484

← 1 2 3 4 5 →