Impact of mesa and planar processes on the radiation hardness of Si detectors

被引：0
|
作者：
Casse, G [1 ]
Glaser, M
Grigoriev, E
Lemeilleur, F
Ruzin, A
Sopko, B
Taffard, A
机构：
[1] CERN, CH-1211 Geneva 23, Switzerland
[2] ASP Assoc Sviluppo Sci Piemonte, I-10133 Turin, Italy
[3] Czech Tech Univ, Prague 16607 6, Czech Republic
[4] Brunel Univ, Uxbridge UB8 3PH, Middx, England
来源：
NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA A-NUCLEI PARTICLES AND FIELDS | 1999年 / 112卷 / 1-2期
关键词：
D O I：
暂无
中图分类号：
O412 [相对论、场论]; O572.2 [粒子物理学];
学科分类号：
摘要：
Various types of silicon mono-crystals (epitaxial of different thickness, standard and oxygenated float zone material) have been grown and processed with mesa and planar technologies to produce 5 x 5 mm(2) pad detectors. The detectors have been irradiated with 24 GeV/c protons. Electrical properties of the detectors have been studied, before and after irradiation, in order to find the correlation with the material type, the fabrication process and the radiation hardness.
引用
收藏
页码：1 / 12
页数：12
相关论文
共 50 条
  • [21] Aspects of radiation hardness for silicon microstrip detectors
    Wheadon, R
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1997, 386 (01): : 143 - 148
  • [22] RADIATION HARDNESS OF SILICON DETECTORS FOR FUTURE COLLIDERS
    FRETWURST, E
    CLAUSSEN, N
    CROITORU, N
    LINDSTROM, G
    PAPENDICK, B
    PEIN, U
    SCHATZ, H
    SCHULZ, T
    WUNSTORF, R
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1993, 326 (1-2): : 357 - 364
  • [23] Radiation Hardness of CCD Vertex Detectors for the ILC
    Sopczak, Andre
    Bekhouche, Khaled
    Bowdery, Chris
    Damerell, Chris
    Davies, Gavin
    Dehimi, Lakhdar
    Greenshaw, Tim
    Koziel, Michal
    Stefanov, Konstantin
    Woolliscroft, Tim
    Worm, Steve
    2006 IEEE NUCLEAR SCIENCE SYMPOSIUM CONFERENCE RECORD, VOL 1-6, 2006, : 576 - 582
  • [24] Radiation hardness of CCD vertex detectors for the ILC
    Sopczak, A.
    Bekhouche, K.
    Bowdery, C.
    Damerell, C.
    Davies, G.
    Dehimi, L.
    Greenshaw, T.
    Koziel, M.
    Stefanov, K.
    Woolliscroft, T.
    Worm, S.
    NUCLEAR PHYSICS B-PROCEEDINGS SUPPLEMENTS, 2007, 172 : 327 - 330
  • [25] ESCAPE PEAK IN SI(LI) PLANAR DETECTORS
    DYSON, NA
    NUCLEAR INSTRUMENTS & METHODS, 1974, 114 (01): : 131 - 133
  • [26] Radiation hardness of thin Low Gain Avalanche Detectors
    Kramberger, G.
    Carulla, M.
    Cavallaro, E.
    Cindro, V
    Flores, D.
    Galloway, Z.
    Grinstein, S.
    Hidalgo, S.
    Fadeyev, V
    Lange, J.
    Mandic, I
    Medin, G.
    Merlos, A.
    McKinney-Martinez, F.
    Mikuz, M.
    Quirion, D.
    Pellegrini, G.
    Petek, M.
    Sadrozinski, H. F-W
    Seiden, A.
    Zavrtanik, M.
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2018, 891 : 68 - 77
  • [27] Radiation hardness of p-type silicon detectors
    Casse, Gianluigi
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2010, 612 (03): : 464 - 469
  • [28] Studies of radiation hardness of oxygen enriched silicon detectors
    Ruzin, A
    Casse, G
    Glaser, M
    Lemeilleur, F
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1999, 426 (01): : 94 - 98
  • [29] Studies of radiation hardness of oxygen enriched silicon detectors
    CERN, EP Division, CH-1211, Geneva, Switzerland
    Nucl Instrum Methods Phys Res Sect A, 1 (94-98):
  • [30] Impact of aging on radiation hardness
    Shaneyfelt, MR
    Winokur, PS
    Fleetwood, DM
    Hash, GL
    Schwank, JR
    Sexton, FW
    Pease, RL
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1997, 44 (06) : 2040 - 2047
12345