Impact of mesa and planar processes on the radiation hardness of Si detectors

被引：0
|
作者：
Casse, G [1 ]
Glaser, M
Grigoriev, E
Lemeilleur, F
Ruzin, A
Sopko, B
Taffard, A
机构：
[1] CERN, CH-1211 Geneva 23, Switzerland
[2] ASP Assoc Sviluppo Sci Piemonte, I-10133 Turin, Italy
[3] Czech Tech Univ, Prague 16607 6, Czech Republic
[4] Brunel Univ, Uxbridge UB8 3PH, Middx, England
来源：
NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA A-NUCLEI PARTICLES AND FIELDS | 1999年 / 112卷 / 1-2期
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D O I：
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中图分类号：
O412 [相对论、场论]; O572.2 [粒子物理学];
学科分类号：
摘要：
Various types of silicon mono-crystals (epitaxial of different thickness, standard and oxygenated float zone material) have been grown and processed with mesa and planar technologies to produce 5 x 5 mm(2) pad detectors. The detectors have been irradiated with 24 GeV/c protons. Electrical properties of the detectors have been studied, before and after irradiation, in order to find the correlation with the material type, the fabrication process and the radiation hardness.
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页码：1 / 12
页数：12
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