High-speed technologies based on III-V compound semiconductors at Fraunhofer IAF

被引：0

作者：

Mikulla, Michael ^{[1
]}

Leuther, Arnulf ^{[1
]}

Brueckner, Peter ^{[1
]}

Schwantuschke, Dirk ^{[1
]}

Tessmann, Axel ^{[1
]}

Schlechtweg, Michael ^{[1
]}

Ambacher, Oliver ^{[1
]}

Caris, Michael ^{[2
]}

机构：

[1] Fraunhofer Inst Appl Solid State Phys IAF, D-78109 Freiburg, Germany

[2] Fraunhofer Inst High Frequency Phys & Radar Tech, D-53343 Wachtberg, Germany

来源：

2013 8TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC) | 2013年

关键词：

compound semcoductors; metamorphic; amplifier; THz; GaN; HEMT;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

At the Fraunhofer Institute for Applied Solid State Physics (IAF) III-V compound semiconductors are used in high speed technologies. Here we focus on GaN-based Monolithic Millimeter-Wave Integrated Circuits (MMICs) for applications in the frequency regime between 2 GHz and 100 GHz and on metamorphic HEMT based MMICs for frequencies spanning from 100 GHz up to 600 GHz. Both technologies rely on state of the art epitaxial growth of suitable HEMT structures which is also carried out at the institute. As examples for the maturity of these technologies a GaN-based two-stage power amplifier operating in V-band is described and for the metamorphic HEMT technology a 300 GHz chip set for THz imaging applications as well as a broad-band six-stage amplifier operating around 600 GHz are presented.

引用

页码：169 / 171

页数：3

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