A Low Power 4T2C nvSRAM With Dynamic Current Compensation Operation Scheme

被引：5

作者：

Liu, Chao ^{[1
,2
]}

Yang, Jianguo ^{[3
,4
]}

Jiang, Pengfei ^{[2
,4
]}

Wang, Qiao ^{[2
,4
]}

Zhang, Donglin ^{[2
,4
]}

Gong, Tiancheng ^{[2
,4
]}

Ding, Qingting ^{[2
,4
]}

Zhao, Yuling ^{[2
,4
]}

Luo, Qing ^{[2
,4
]}

Xue, Xiaoyong ^{[5
,6
]}

Lv, Hangbing ^{[2
,4
]}

Liu, Ming ^{[2
,4
]}

机构：

[1] Univ Sci & Technol China, Dept Elect Sci & Technol, Hefei 230000, Peoples R China

[2] Univ Chinese Acad Sci, Sch Microelect, Beijing 100020, Peoples R China

[3] Zhejiang Lab, Hangzhou 311121, Peoples R China

[4] Chinese Acad Sci, Key Lab Microelect Devices & Integrated Technol, Inst Microelect, Beijing 100020, Peoples R China

[5] Fudan Univ, ASIC, Sch Microelect, Shanghai 201203, Peoples R China

[6] Fudan Univ, Syst State Key Lab, Sch Microelect, Shanghai 201203, Peoples R China

来源：

IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS | 2020年 / 28卷 / 11期

基金：

中国国家自然科学基金;

关键词：

Ferroelectric capacitor (FeCAP); low power; nonvolatile static random access memory (nvSRAM); polarization-dependent leakage current (PDLC); NONVOLATILE SRAM; BACKUP; CELL;

D O I：

10.1109/TVLSI.2020.3019524

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

This study proposed a novel nonvolatile static random access memory (nvSRAM) cell with two ferroelectric capacitors (FeCAPs) embedded inside a 4T SRAM cell, i.e., 4T2C, for minimal area penalty and full logic compatibility. The FeCAP with 10-nm-thick Hf0.5Zr0.5O2 film shows excellent ferroelectricity (Pr = 15 mu C/cm(2)) and good memory characteristics (cycles > 10(11)). The 4T2C nvSRAM is capable of storing and restoring previous memory states for nonvolatile data storage. To compensate the leakage current in the dynamic nodes of 4T load less SRAM, we propose a dynamic current compensation operation scheme by exploiting the polarization-dependent leakage current of FeCAP. Outstanding characteristics were achieved in this nvSRAM cell: 1) elimination of the dc path; 2) ultralow store and restore power consumption; and 3) high area efficiency.

引用

页码：2469 / 2473

页数：5

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