Phase transformations in the Mn-Ge system and in Ge x Mn1-x diluted semiconductors

被引：9

作者：

Myagkov, V. G. ^{[1
,2
]}

Zhigalov, V. S. ^{[1
,2
]}

Matsynin, A. A. ^{[1
,2
]}

Bykova, L. E. ^{[1
]}

Bondarenko, G. V. ^{[1
]}

Bondarenko, G. N. ^{[3
]}

Patrin, G. S. ^{[1
,4
]}

Velikanov, D. A. ^{[1
,4
]}

机构：

[1] Russian Acad Sci, Siberian Branch, LV Kirensky Phys Inst, Krasnoyarsk 660036, Russia

[2] Siberian State Aerosp Univ, Krasnoyarsk 660014, Russia

[3] Russian Acad Sci, Siberian Branch, Inst Chem & Chem Technol, Krasnoyarsk 660036, Russia

[4] Siberian Fed Univ, Krasnoyarsk 660041, Russia

来源：

JETP LETTERS | 2012年 / 96卷 / 01期

关键词：

HIGH-PRESSURE SYNTHESIS; MAGNETIC-PROPERTIES; THIN-FILMS;

D O I：

10.1134/S0021364012130097

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Results of an X-ray diffraction study as well as magnetic and electrical measurements of the solid-state reactions in Ge/Mn polycrystalline films of an 80/20 atomic composition have been presented. It has been shown that the ferromagnetic Mn5Ge3 phase is formed first on the Ge/Mn interface after annealing at similar to 120A degrees C. The further increase in the annealing temperature to 300A degrees C leads to the beginning of the synthesis of the Mn11Ge8 phase, which becomes dominating at 400A degrees C. The existence of new structural transitions in the Mn-Ge system in the region of similar to 120 and similar to 300A degrees C has been predicted on the basis of the presented results and results obtained earlier when studying solid-state reactions in different film structures. The supposition about the general chemical mechanisms of the synthesis of the Mn5Ge3 and Mn11Ge8 phases during the solid-state reactions in the Ge/Mn films of the 80/20 atomic composition and the phase separation in Ge (x) Mn1 - x (x > 0.95) diluted semiconductors has been substantiated.

引用

页码：40 / 43

页数：4

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