Phase transformations in the Mn-Ge system and in Ge x Mn1-x diluted semiconductors

被引：9

作者：

Myagkov, V. G. ^{[1
,2
]}

Zhigalov, V. S. ^{[1
,2
]}

Matsynin, A. A. ^{[1
,2
]}

Bykova, L. E. ^{[1
]}

Bondarenko, G. V. ^{[1
]}

Bondarenko, G. N. ^{[3
]}

Patrin, G. S. ^{[1
,4
]}

Velikanov, D. A. ^{[1
,4
]}

机构：

[1] Russian Acad Sci, Siberian Branch, LV Kirensky Phys Inst, Krasnoyarsk 660036, Russia

[2] Siberian State Aerosp Univ, Krasnoyarsk 660014, Russia

[3] Russian Acad Sci, Siberian Branch, Inst Chem & Chem Technol, Krasnoyarsk 660036, Russia

[4] Siberian Fed Univ, Krasnoyarsk 660041, Russia

来源：

JETP LETTERS | 2012年 / 96卷 / 01期

关键词：

HIGH-PRESSURE SYNTHESIS; MAGNETIC-PROPERTIES; THIN-FILMS;

D O I：

10.1134/S0021364012130097

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Results of an X-ray diffraction study as well as magnetic and electrical measurements of the solid-state reactions in Ge/Mn polycrystalline films of an 80/20 atomic composition have been presented. It has been shown that the ferromagnetic Mn5Ge3 phase is formed first on the Ge/Mn interface after annealing at similar to 120A degrees C. The further increase in the annealing temperature to 300A degrees C leads to the beginning of the synthesis of the Mn11Ge8 phase, which becomes dominating at 400A degrees C. The existence of new structural transitions in the Mn-Ge system in the region of similar to 120 and similar to 300A degrees C has been predicted on the basis of the presented results and results obtained earlier when studying solid-state reactions in different film structures. The supposition about the general chemical mechanisms of the synthesis of the Mn5Ge3 and Mn11Ge8 phases during the solid-state reactions in the Ge/Mn films of the 80/20 atomic composition and the phase separation in Ge (x) Mn1 - x (x > 0.95) diluted semiconductors has been substantiated.

引用

页码：40 / 43

页数：4

共 50 条

[11] Aqueous germanate solution, alternative sol-gel precursor for preparation of Mn x Ge1-x diluted magnetic semiconductors
Jing, Chengbin
Shan, Haiyang
Zhang, Chuanjian
Zang, Xiaodan
Bai, Wei
Chu, Junhao
JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY, 2009, 51 (02) : 139 - 145
[12] HEATS OF FORMATION AND NATURE OF ATOMIC INTERACTION IN MN-GE SYSTEM
GOLUTVIN, YM
MASLENNI.EG
KORSHUNO.BG
RUSSIAN METALLURGY, 1972, (06): : 154 - 158
[13] MAGNETIC PROPERTIES OF MN-GE SOLID SOLUTIONS
ZAVADSKII, EA
URUSHADZ.AG
SOVIET PHYSICS JETP-USSR, 1971, 33 (01): : 138 - +
[14] Electronic structure and x-ray magnetic circular dichroism in (Ge,Mn)Te diluted magnetic semiconductors
Antonov, V. N.
Shpak, A. P.
Bekenov, L. V.
Germash, L. P.
Yaresko, A. N.
CONDENSED MATTER PHYSICS, 2010, 13 (02)
[15] Magnetocaloric properties of Fe and Ge doped Ni2 Mn1-x Cux Ga
Khan, Mahmud
Stadler, Shane
Ali, Naushad
Journal of Applied Physics, 2007, 101 (09):
[16] Crystal structure and electrical properties of Gd x Mn1-x S and Ti x Mn1-x Se solid solutions
Galyas, A. I.
Demidenko, O. F.
Makovetskii, G. I.
Yanushkevich, K. I.
Ryabinkina, L. I.
Romanova, O. B.
PHYSICS OF THE SOLID STATE, 2010, 52 (04) : 687 - 690
[17] Magneto-optical spectra of Mn-Ge films
Ricci, F.
D'Orazio, F.
Continenza, A.
Lucari, F.
Passacantando, M.
Impellizzeri, G.
Priolo, F.
Freeman, A. J.
INTERNATIONAL CONFERENCE ON MAGNETISM (ICM 2009), 2010, 200
[18] Magnetocaloric effect in Mn1-x CoGeSi x alloys
Si, Xiaodong
Liu, Yongsheng
Shen, Yulong
Yu, Wenying
Ma, Xinxiu
Zhang, Zhanxian
Xu, Yan
Gao, Tian
JOURNAL OF MATERIALS SCIENCE, 2018, 53 (05) : 3661 - 3671
[19] Magnetocapacitance effect in Gd x Mn1-x S
Aplesnin, S. S.
Sitnikov, M. N.
PHYSICS OF THE SOLID STATE, 2016, 58 (06) : 1148 - 1153
[20] Effect of Mn thickness on the Mn-Ge phase formation during reactions of 50 nm and 210 nm thick Mn films deposited on Ge (111) substrate
Abbes, O.
Xu, F.
Portavoce, A.
Girardeaux, C.
Hoummada, K.
Le Thanh, V.
DIFFUSION IN MATERIALS - DIMAT 2011, 2012, 323-325 : 439 - +

← 1 2 3 4 5 →