A UVLO Circuit in SiC Compatible With Power MOSFET Integration

被引：15

作者：

Glover, Michael D. ^{[1
]}

Shepherd, Paul ^{[1
]}

Francis, A. Matt ^{[1
]}

Mudholkar, Mihir ^{[1
]}

Mantooth, Homer Alan ^{[1
]}

Ericson, Milton Nance ^{[2
]}

Frank, S. Shane ^{[2
]}

Britton, Charles L. ^{[2
]}

Marlino, Laura D. ^{[2
]}

McNutt, Ty R. ^{[3
]}

Barkley, Adam ^{[3
]}

Whitaker, Bret ^{[3
]}

Lostetter, Alexander B. ^{[3
]}

机构：

[1] Univ Arkansas, Fayetteville, AR 72701 USA

[2] Oak Ridge Natl Lab, Oak Ridge, TN 37831 USA

[3] Arkansas Power Elect Int Inc, Fayetteville, AR 72701 USA

来源：

IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS | 2014年 / 2卷 / 03期

关键词：

MOSFET circuits; power MOSFET; silicon carbide (SiC); temperature; GATE DRIVER; SILICON;

D O I：

10.1109/JESTPE.2014.2313119

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The design and test of the first undervoltage lock-out circuit implemented in a low-voltage 4H silicon carbide process capable of single-chip integration with power MOSFETs is presented. The lock-out circuit, a block of the protection circuitry of a single-chip gate driver topology designed for use in a plug-in hybrid vehicle charger, was demonstrated to have rise/fall times compatible with a MOSFET switching speed of 250 kHz while operating over the targeted operating temperature range between 0 degrees C and 200 degrees C. Captured data show the circuit to be functional over a temperature range from -55 degrees C to 300 degrees C. The design of the circuit and test results is presented.

引用

页码：425 / 433

页数：9

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