A Low-noise High-channel-count 20 GHz Passively Mode Locked Quantum Dot Laser Grown on Si

被引：0

作者：

Liu, Songtao ^{[1
]}

Jung, Daehwan ^{[2
]}

Norman, Justin C. ^{[3
]}

Kennedy, M. J. ^{[1
]}

Gossard, Arthur C. ^{[1
,2
,3
]}

Bowers, John E. ^{[1
,2
,3
]}

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

[2] Univ Calif Santa Barbara, Inst Energy Efficiency, Santa Barbara, CA 93106 USA

[3] Univ Calif Santa Barbara, Mat Dept, Santa Barbara, CA 93106 USA

来源：

2019 OPTICAL FIBER COMMUNICATIONS CONFERENCE AND EXHIBITION (OFC) | 2019年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report, for the first time, a low noise high-channel-count 20 GHz passively mode locked quantum dot laser grown on CMOS compatible on-axis (001) silicon substrate. The laser demonstrates a wide mode locking regime in the O-band. A record low timing jitter value of 82.7 fs (4 -80 MHz) and a narrow RF 3-dB linewidth of 1.8 kHz are reported. A total of 58 wavelength channels within 3 dB optical bandwidth (80 lines within 10 dB) is also shown. The integrated average relative intensity noise values of the whole spectrum and a single channel are -152 dB/Hz and -133 dB/Hz in the frequency range from 10 MHz to 10 GHz, respectively.

引用

页数：3

共 50 条

[21] Compact low-noise passively mode-locked Er-doped femtosecond all-fiber laser with 2.68 GHz fundaments repetition rate
Song, Jiazheng
Wang, Hushan
Huang, Xinning
Hu, Xiaohong
Zhang, Ting
Wang, Yishan
Liu, Yuanshan
Zhang, Jianguo
APPLIED OPTICS, 2019, 58 (07) : 1733 - 1738
[22] 35 GHz pure passively mode locked quantum dot lasers operating close to 1.3μm
Tan, WK
Bryce, AC
Marsh, JH
Maximov, MV
Ustinov, VM
2004 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2, 2004, : 617 - 618
[23] Characteristics of Passively Mode-Locked Quantum Dot Lasers from 20 to 120 °C
Mee, J. K.
Crowley, M. T.
Raghunathan, R.
Murrell, D.
Lester, L. F.
PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES XXI, 2013, 8619
[24] 490 fs pulse generation from passively mode-locked single section quantum dot laser directly grown on on-axis GaP/Si
Liu, S.
Jung, D.
Norman, J. C.
Kennedy, M. J.
Gossard, A. C.
Bowers, J. E.
ELECTRONICS LETTERS, 2018, 54 (07) : 432 - +
[25] Low phase noise and quasi-tunable millimeter-wave generator using a passively In As/InP mode-locked quantum dot laser
刘丽
刘仰光
章晓敏
刘邦权
张秀普
Optoelectronics Letters, 2020, 16 (06) : 441 - 445
[26] Pulse and noise properties of a two section passively mode-locked quantum dot laser under long delay feedback
Simos, Christos
Simos, Hercules
Mesaritakis, Charis
Kapsalis, Alexandros
Syvridis, Dimitris
OPTICS COMMUNICATIONS, 2014, 313 : 248 - 255
[27] A Low Repetition Rate All-Active Monolithic Passively Mode-Locked Quantum-Dot Laser
Li, Yan
Breivik, Magnus
Feng, Cheng-Yong
Fimland, Bjorn-Ove
Lester, Luke. F.
IEEE PHOTONICS TECHNOLOGY LETTERS, 2011, 23 (14) : 1019 - 1021
[28] Passively Mode-Locked 4.6 and 10.5 GHz Quantum Dot Laser Diodes Around 1.55 μm With Large Operating Regime
Heck, Martijn J. R.
Renault, Amandine
Bente, Erwin A. J. A.
Oei, Yok-Siang
Smit, Meint K.
Eikema, Kjeld S. E.
Ubachs, Wim
Anantathanasarn, Sanguan
Notzel, Richard
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2009, 15 (03) : 634 - 643
[29] 20 GHz to 83 GHz single section InAs/InP quantum dot mode-locked lasers grown on (001) misoriented substrate
Klaime, K.
Piron, R.
Paranthoen, C.
Batte, T.
Grillot, F.
Dehaese, O.
Loualiche, S.
Le Corre, A.
Rosales, R.
Merghem, K.
Martinez, A.
Ramdane, A.
2012 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM), 2013, : 181 - 184
[30] Monolithic passively mode-locked lasers using quantum dot or quantum well materials grown on GaAs substrates
Xin, Y. -C.
Stintz, A.
Cao, H.
Zhang, L.
Gray, A. L.
Bank, S. R.
Osinski, M.
Harris, J.
Lester, L. F.
PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES XV, 2007, 6468

← 1 2 3 4 5 →