A Low-noise High-channel-count 20 GHz Passively Mode Locked Quantum Dot Laser Grown on Si

被引：0

作者：

Liu, Songtao ^{[1
]}

Jung, Daehwan ^{[2
]}

Norman, Justin C. ^{[3
]}

Kennedy, M. J. ^{[1
]}

Gossard, Arthur C. ^{[1
,2
,3
]}

Bowers, John E. ^{[1
,2
,3
]}

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

[2] Univ Calif Santa Barbara, Inst Energy Efficiency, Santa Barbara, CA 93106 USA

[3] Univ Calif Santa Barbara, Mat Dept, Santa Barbara, CA 93106 USA

来源：

2019 OPTICAL FIBER COMMUNICATIONS CONFERENCE AND EXHIBITION (OFC) | 2019年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report, for the first time, a low noise high-channel-count 20 GHz passively mode locked quantum dot laser grown on CMOS compatible on-axis (001) silicon substrate. The laser demonstrates a wide mode locking regime in the O-band. A record low timing jitter value of 82.7 fs (4 -80 MHz) and a narrow RF 3-dB linewidth of 1.8 kHz are reported. A total of 58 wavelength channels within 3 dB optical bandwidth (80 lines within 10 dB) is also shown. The integrated average relative intensity noise values of the whole spectrum and a single channel are -152 dB/Hz and -133 dB/Hz in the frequency range from 10 MHz to 10 GHz, respectively.

引用

页数：3

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