Influence of oxygen and oxygen related defects on the minority carrier lifetime of high purity CZ and MCZ silicon

被引：0
|
作者：
Porrini, M [1 ]
Gambaro, D [1 ]
Geranzani, P [1 ]
Falster, R [1 ]
机构：
[1] MEMC ELECT MAT SPA,I-28100 NOVARA,ITALY
来源：
PROCEEDINGS OF THE FOURTH INTERNATIONAL SYMPOSIUM ON HIGH PURITY SILICON | 1996年 / 96卷 / 13期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：170 / 179
页数：10
相关论文
共 50 条
  • [31] INFLUENCE OF HEAT-TREATMENT ON THE LIFETIME OF THE MINORITY-CARRIERS IN OXYGEN-DOPED SILICON
    GLINCHUK, KD
    LITOVCHENKO, NM
    SALNIK, ZA
    SKRYL, SI
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1985, 19 (02): : 213 - 214
  • [32] THE INFLUENCE OF MINORITY-CARRIER INJECTION ON SUBTHRESHOLD DEFECTS IN SILICON
    YUNUSOV, MS
    ABDURAKHMANOVA, SN
    ZAIKOVSKAYA, MA
    OKSENGENDLER, BL
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1984, 81 (02): : K145 - K149
  • [33] Relation between oxygen precipitation and carrier recombination lifetime in Cz-Si crystal
    Lee, BY
    Park, BM
    Hwang, DH
    Kwon, OJ
    PROCEEDINGS OF THE THIRD INTERNATIONAL SYMPOSIUM ON DEFECTS IN SILICON, 1999, 99 (01): : 80 - 87
  • [34] PROCESS MODELING WITH HIGH OXYGEN-CONTENT CZ SILICON
    HUBER, D
    STALLHOFER, P
    BLATTE, M
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (03) : C98 - C98
  • [35] Influence of growth rate on minority carrier lifetime of multicrystalline silicon ingot
    Yang, Xiufan
    Zhang, Dianxi
    Guo, Zhongzheng
    Yan, Wanjun
    Zhang, Houyong
    2020 6TH INTERNATIONAL CONFERENCE ON ENERGY, ENVIRONMENT AND MATERIALS SCIENCE, 2020, 585
  • [36] Fundamental boron-oxygen-related carrier lifetime limit in mono- and multicrystalline silicon
    Bothe, K
    Sinton, R
    Schmidt, J
    PROGRESS IN PHOTOVOLTAICS, 2005, 13 (04): : 287 - 296
  • [37] Influence of hydrogen on the regeneration of boron-oxygen related defects in crystalline silicon
    Wilking, S.
    Herguth, A.
    Hahn, G.
    JOURNAL OF APPLIED PHYSICS, 2013, 113 (19)
  • [38] MINORITY-CARRIER LIFETIME IN GOLD-DIFFUSED SILICON AT HIGH CARRIER CONCENTRATIONS
    SCHMID, W
    REINER, J
    JOURNAL OF APPLIED PHYSICS, 1982, 53 (09) : 6250 - 6252
  • [39] Measurement of minority carrier lifetime in silicon by high speed terahertz detector
    Zhang Z.
    Chen X.
    Tian Z.
    Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering, 2019, 48 (09):
  • [40] Extraordinarily High Minority Charge Carrier Lifetime Observed in Crystalline Silicon
    Steinhauser, Bernd
    Niewelt, Tim
    Richter, Armin
    Eberle, Rebekka
    Schubert, Martin C.
    SOLAR RRL, 2021, 5 (11):
12345